公开(公告)号：WO2009033067A2

公开(公告)日：2009-03-12

申请号：PCT/US2008075459

申请日：2008-09-05

Applicant: INTERMOLECULAR INC ,  ENDO RICK ,  WEINER KURT ,  DE INDRANIL ,  TSUNG JAMES ,  ZHAO MAOSHENG ,  CHENG JEREMY

Inventor： ENDO RICK ,  WEINER KURT ,  DE INDRANIL ,  TSUNG JAMES ,  ZHAO MAOSHENG ,  CHENG JEREMY

IPC: H01L21/20 ,  C23C16/00 ,  H01L21/44

CPC classification number: H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract translation: 提供组合处理室。 组合处理室被配置为隔离可旋转的衬底支撑件的径向部分，该可旋转衬底支撑件又被配置为支撑衬底。 在一个实施例中，腔室包括多个聚集过程头。 在一个实施例中，具有设置在基板支撑件和工艺头之间的基板的插入件限定了用于沉积工艺的约束区域。 基板具有能够将沉积材料接近基板的开口。 通过基板的旋转和开口的移动，基板的多个区域是可访问的，以在单个基板上执行组合处理。

公开(公告)号：EP2186116A4

公开(公告)日：2016-10-26

申请号：EP08799200

申请日：2008-09-05

Applicant: INTERMOLECULAR INC

Inventor： ENDO RICK ,  WEINER KURT ,  DE INDRANIL ,  TSUNG JAMES ,  ZHAO MAOSHENG

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/45565 ,  B05B15/0425 ,  B05B15/1296 ,  B05D1/10 ,  B05D1/62 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4587 ,  C23C16/50 ,  Y10S438/942

Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

Abstract translation: 本发明的各种实施例提供了衬底和工艺头的相对运动，以在最小空间中访问整个晶片，以在衬底的各个区域上进行组合处理。 这些头使得所述室内的现场隔离处理和使用其的方法被描述。

公开(公告)号：EP2186115A4

公开(公告)日：2014-04-30

申请号：EP08799247

申请日：2008-09-05

Applicant: INTERMOLECULAR INC

Inventor： ENDO RICK ,  WEINER KURT ,  DE INDRANIL ,  TSUNG JAMES ,  ZHAO MAOSHENG ,  CHENG JEREMY

IPC: H01L21/20 ,  B01J19/00 ,  C23C14/04 ,  C23C14/50 ,  C23C14/54 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01L21/32051 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/50 ,  C23C14/548 ,  C23C16/45544 ,  H01L21/67005 ,  H01L21/6719

公开(公告)号：WO2009131902A3

公开(公告)日：2010-03-11

申请号：PCT/US2009040902

申请日：2009-04-17

Applicant: INTERMOLECULAR INC ,  ELPIDA MEMORY INC ,  HASHIM IMRAN ,  DE INDRANIL ,  CHIANG TONY ,  HAYWOOD EDWARD ,  CHEN HANHONG ,  FUCHIGAMI NOBI ,  KUMAR PRAGATI ,  MALHOTRA SANDRA ,  SHANKER SUNIL

Inventor： HASHIM IMRAN ,  DE INDRANIL ,  CHIANG TONY ,  HAYWOOD EDWARD ,  CHEN HANHONG ,  FUCHIGAMI NOBI ,  KUMAR PRAGATI ,  MALHOTRA SANDRA ,  SHANKER SUNIL

IPC: H01L21/8242 ,  H01L21/205 ,  H01L21/31 ,  H01L27/108

CPC classification number: H01L28/65 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02697 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40

Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

Abstract translation: 本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。 具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。 在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。 如果需要，氧化物层可以通过PVD工艺或者通过使用特定前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺作为反应过程的结果来生产 反应。