公开(公告)号：US20140319688A1

公开(公告)日：2014-10-30

申请号：US14326252

申请日：2014-07-08

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Norbert Mais ,  Reimund Engl ,  Hans-Joerg Timme ,  Alfred Vater ,  Stephan Henneck ,  Norbert Urbansky

IPC: H01L23/00 ,  H01L23/532

CPC classification number: H01L23/564 ,  H01L21/7685 ,  H01L21/76852 ,  H01L23/53219 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/4911 ,  H01L2924/01015 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/20752

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底上形成金属线，并在金属线的顶表面上沉积合金材料层。 该方法还包括通过将合金材料层与金属线组合来形成保护层。

公开(公告)号：US20150235855A1

公开(公告)日：2015-08-20

申请号：US14701102

申请日：2015-04-30

Applicant: Infineon Technologies AG

Inventor： Manfred Schneegans ,  Juergen Foerster ,  Bernhard Weidgans ,  Norbert Urbansky ,  Tilo Rotth

IPC: H01L21/285 ,  C23C14/34 ,  H01L21/768

CPC classification number: H01L21/2855 ,  C23C14/14 ,  C23C14/34 ,  C23C14/3414 ,  C23C14/3492 ,  C23C14/54 ,  H01L21/76877

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract translation: 公开了各种技术，方法和装置，其中金属沉积在基板上，并且金属对基板引起的应力受到限制，例如限制晶片的弯曲。

公开(公告)号：US20140117509A1

公开(公告)日：2014-05-01

申请号：US13661810

申请日：2012-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Manfred Schneegans ,  Juergen Foerster ,  Bernhard Weidgans ,  Norbert Urbansky ,  Tilo Rotth

IPC: H01L21/768 ,  C23C14/34 ,  H01L23/48 ,  H01L21/3205 ,  H01L29/06

CPC classification number: H01L21/2855 ,  C23C14/14 ,  C23C14/34 ,  C23C14/3414 ,  C23C14/3492 ,  C23C14/54 ,  H01L21/76877

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract translation: 公开了各种技术，方法和装置，其中金属沉积在基板上，并且金属对基板引起的应力受到限制，例如限制晶片的弯曲。