公开(公告)号：US11769719B2

公开(公告)日：2023-09-26

申请号：US16017671

申请日：2018-06-25

Applicant: Intel Corporation

Inventor： Jonathan Rosch ,  Wei-Lun Jen ,  Cheng Xu ,  Liwei Cheng ,  Andrew Brown ,  Yikang Deng

IPC: H05K1/11 ,  H05K1/18 ,  H01L23/498 ,  H01L21/48 ,  H05K1/02

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49827 ,  H05K1/111 ,  H05K1/115 ,  H05K1/025 ,  H05K1/18 ,  H05K2201/095 ,  H05K2201/09727 ,  H05K2201/09736 ,  H05K2201/09827

Abstract: Embodiments include a package substrate, a method of forming the package substrate, and a semiconductor package. A package substrate includes a conductive layer in a dielectric, a first trace and a first via pad of the conductive layer having a first thickness, and a second trace and a second via pad of the conductive layer having a second thickness. The second thickness of second trace and second via pad may be greater than the first thickness of the first trace and first via pad. The dielectric may include a first dielectric thickness and a second dielectric thickness, where the second dielectric thickness may be less than the first dielectric thickness. The package substrate may include a third via having a third thickness on the first via pad, and a fourth via having a fourth thickness on the second via pad, wherein the third thickness is greater than the fourth thickness.

公开(公告)号：US11705389B2

公开(公告)日：2023-07-18

申请号：US16437420

申请日：2019-06-11

Applicant: Intel Corporation

Inventor： Andrew J. Brown ,  Luke Garner ,  Liwei Cheng ,  Lauren Link ,  Cheng Xu ,  Ying Wang ,  Bin Zou ,  Chong Zhang

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/49894

Abstract: Embodiments herein describe techniques for a semiconductor device including a package substrate. The package substrate includes a via pad at least partially in a core layer. A first dielectric layer having a first dielectric material is above the via pad and the core layer, where the first dielectric layer has a first through hole that is through the first dielectric layer to reach the via pad. A second dielectric layer having a second dielectric material is at least partially filling the first through hole, where the second dielectric layer has a second through hole that is through the second dielectric layer to reach the via pad. A via is further within the second through hole of the second dielectric layer, surrounded by the second dielectric material, and in contact with the via pad. Other embodiments may be described and/or claimed.

公开(公告)号：US11380609B2

公开(公告)日：2022-07-05

申请号：US15985348

申请日：2018-05-21

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Jiwei Sun ,  Ji Yong Park ,  Kyu Oh Lee ,  Yikang Deng ,  Zhichao Zhang ,  Liwei Cheng ,  Andrew James Brown

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

公开(公告)号：US10741947B2

公开(公告)日：2020-08-11

申请号：US15868169

申请日：2018-01-11

Applicant: Intel Corporation

Inventor： Amruthavalli Pallavi Alur ,  Siddharth K. Alur ,  Liwei Cheng ,  Lauren A. Link ,  Jonathan L. Rosch ,  Sai Vadlamani ,  Cheng Xu

IPC: H01R12/71 ,  H01R43/16 ,  H01R13/24 ,  H01R12/70 ,  H05K3/42 ,  H01R12/58 ,  H01R12/52

Abstract: An electronic interconnect may include a substrate. The substrate may include a passageway in the substrate. The passageway may extend from a first surface of the substrate toward a second surface of the substrate. The passageway may be closed at an end of the passageway. The electronic interconnect may include a plated through hole socket coupled to the passageway. The electronic interconnect may include a contact. The contact may include a pin. The pin may be configured to engage with the plated through hole socket. The electronic interconnect may include a solder ball. The solder ball may be coupled to the plated through hole socket.

公开(公告)号：US12288744B2

公开(公告)日：2025-04-29

申请号：US17742816

申请日：2022-05-12

Applicant: Intel Corporation

Inventor： Ji Yong Park ,  Kyu Oh Lee ,  Yikang Deng ,  Zhichao Zhang ,  Liwei Cheng ,  Andrew James Brown ,  Cheng Xu ,  Jiwei Sun

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

公开(公告)号：US20190355654A1

公开(公告)日：2019-11-21

申请号：US15985348

申请日：2018-05-21

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Jiwei Sun ,  Ji Yong Park ,  Kyu Oh Lee ,  Yikang Deng ,  Zhichao Zhang ,  Liwei Cheng ,  Andrew James Brown

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

公开(公告)号：US20220278038A1

公开(公告)日：2022-09-01

申请号：US17742816

申请日：2022-05-12

Applicant: Intel Corporation

Inventor： Ji Yong Park ,  Kyu Oh Lee ,  Yikang Deng ,  Zhichao Zhang ,  Liwei Cheng ,  Andrew James Brown ,  Cheng Xu ,  Jiwei Sun

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

公开(公告)号：US20190326222A1

公开(公告)日：2019-10-24

申请号：US16473599

申请日：2017-03-30

Applicant: INTEL CORPORATION

Inventor： Sri Chaitra J. Chavali ,  Liwei Cheng ,  Siddharth K. Alur ,  Sheng Li

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/498 ,  H01L21/027 ,  H01L25/18

Abstract: An apparatus system is provided which comprises: a substrate; a metal pillar formed on the substrate, the metal pillar comprising a first section and a second section, wherein the first section of the metal pillar is formed by depositing metal in a first opening of a first photoresist layer, and wherein the second section of the metal pillar is formed by depositing metal in a second opening of a second photoresist layer.