1.
    发明专利
    未知

    公开(公告)号:DE602004011308D1

    公开(公告)日:2008-03-06

    申请号:DE602004011308

    申请日:2004-11-25

    Applicant: JSR CORP

    Abstract: A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.

    2.
    发明专利
    未知

    公开(公告)号:DE69601586T2

    公开(公告)日:1999-10-14

    申请号:DE69601586

    申请日:1996-03-28

    Applicant: JSR CORP

    Abstract: The present invention provides a radiation sensitive resin composition which contains an alkali soluble resin and a 1,2-quinonediazide compound represented by the following formula, for example. The radiation sensitive resin composition of the present invention has an excellent developability, provides an excellent pattern shape, is superior in sensitivity and resolution, and has greatly improved focus latitude and heat resistance in particular. Therefore, the radiation sensitive resin composition of the present invention can be suitably used as a resist for the production of LSIs.

    3.
    发明专利
    未知

    公开(公告)号:DE602004011308T2

    公开(公告)日:2009-01-22

    申请号:DE602004011308

    申请日:2004-11-25

    Applicant: JSR CORP

    Abstract: A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.

    4.
    发明专利
    未知

    公开(公告)号:DE69601586D1

    公开(公告)日:1999-04-08

    申请号:DE69601586

    申请日:1996-03-28

    Applicant: JSR CORP

    Abstract: The present invention provides a radiation sensitive resin composition which contains an alkali soluble resin and a 1,2-quinonediazide compound represented by the following formula, for example. The radiation sensitive resin composition of the present invention has an excellent developability, provides an excellent pattern shape, is superior in sensitivity and resolution, and has greatly improved focus latitude and heat resistance in particular. Therefore, the radiation sensitive resin composition of the present invention can be suitably used as a resist for the production of LSIs.

    5.
    发明专利
    未知

    公开(公告)号:DE602005006489D1

    公开(公告)日:2008-06-19

    申请号:DE602005006489

    申请日:2005-09-21

    Applicant: JSR CORP

    Abstract: A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3).

    6.
    发明专利
    未知

    公开(公告)号:DE69718113T2

    公开(公告)日:2003-10-09

    申请号:DE69718113

    申请日:1997-08-27

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition including; (i) an alkali-soluble resin; (ii) a phenol compound represented by the following formula (1): wherein R1 to R4 are each represent halogen, alkyl, alkoxyl, aryl, nitro, cyano, hydroxyalkyl, hydroxyalkoxyl or hydroxyl; a, b, c and d each represent an integer of 0 to 4 and satisfying 0

    7.
    发明专利
    未知

    公开(公告)号:DE69718113D1

    公开(公告)日:2003-02-06

    申请号:DE69718113

    申请日:1997-08-27

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition including; (i) an alkali-soluble resin; (ii) a phenol compound represented by the following formula (1): wherein R1 to R4 are each represent halogen, alkyl, alkoxyl, aryl, nitro, cyano, hydroxyalkyl, hydroxyalkoxyl or hydroxyl; a, b, c and d each represent an integer of 0 to 4 and satisfying 0

    8.
    发明专利
    未知

    公开(公告)号:DE69706029T2

    公开(公告)日:2002-06-06

    申请号:DE69706029

    申请日:1997-12-10

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition including an alkali soluble resin and a quinonediazide compound is provided. The quinonediazide compound has the formula (1), for example: wherein, R to R are an alkyl, cycloalkyl or aryl group; a and b are an integer of 1 to 3; D and D are independently a hydrogen atom or a 1,2-quinonediazidosulfonyl group, provided that at least one of D is a 1,2-quinonediazidosulfonyl group; A is a bonding such as single bond; and x and y are an integer of 0 to 2. The composition is suitable as a positive resist, which effectively restrains the occurrence of scum, and excellent in developability, pattern shape, sensitivity, resolution and focus latitude.

    9.
    发明专利
    未知

    公开(公告)号:DE69706029D1

    公开(公告)日:2001-09-13

    申请号:DE69706029

    申请日:1997-12-10

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition including an alkali soluble resin and a quinonediazide compound is provided. The quinonediazide compound has the formula (1), for example: wherein, R to R are an alkyl, cycloalkyl or aryl group; a and b are an integer of 1 to 3; D and D are independently a hydrogen atom or a 1,2-quinonediazidosulfonyl group, provided that at least one of D is a 1,2-quinonediazidosulfonyl group; A is a bonding such as single bond; and x and y are an integer of 0 to 2. The composition is suitable as a positive resist, which effectively restrains the occurrence of scum, and excellent in developability, pattern shape, sensitivity, resolution and focus latitude.

    METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM
    10.
    发明公开
    METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM 有权
    VERFAHREN ZUR HERSTELLUNG VON聚合物,聚合物,ZUSAMMENSETZUNG ZUR BILDUNG EINES ISOLIERFILMS,VERFAHREN ZUR HERSTELLUNG VON ISOLIERFILM UND ISOLIERFILM

    公开(公告)号:EP1705207A4

    公开(公告)日:2009-06-24

    申请号:EP05703612

    申请日:2005-01-14

    Applicant: JSR CORP

    Abstract: Disclosed is a method for producing a polymer including hydrolysis-condensation of a silane monomer (B) containing a hydrolyzable group in the presence of one or more polycarbosilanes (A) wherein at least one of the polycarbosilanes (A) is a polycarbosilane (I) as defined below. A polycarbosilane (I) is obtained by reacting a compound represented by the general formula (1) below in the presence of at least one of an alkali metal and an alkaline earth metal, and has a weight average molecular weight of not less than 500. R mY3-mSiCR nX3-n (1) (In the formula, R and R may be the same or different and respectively represent a monovalent organic group or a hydrogen atom; X represents a halogen atom; Y represents a halogen atom or an alkoxy group; k represents an integer of 0-3; and m and n may be the same or different and respectively represent an integer of 0-2.)

    Abstract translation: 公开了一种生产聚合物的方法,该方法包括在一种或多种聚碳硅烷(A)存在下水解缩合含有可水解基团的硅烷单体(B),其中至少一种聚碳硅烷(A)是聚碳硅烷(I) 如下所述。 聚碳硅烷(I)通过使由下述通式(1)表示的化合物在碱金属和碱土金属中的至少一种存在下反应而获得,并且具有不小于500的重均分子量。 R 1 mY 3-mSiCR 2 nX 3-n ...(1)(式中,R 1和R 2可以相同或不同,分别表示一价有机基团或氢原子,X表示 卤原子,Y表示卤素原子或烷氧基,k表示0〜3的整数,m和n可以相同也可以不同,表示0〜2的整数。)

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