Abstract:
Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.
Abstract:
Beschichtungszusammensetzungen, die für UV-Prägelithographie-Anwendungen geeignet sind, umfassen mindestens ein Vinylether-Vernetzungsmittel mit mindestens zwei Vinylethergruppen; mindestens ein Verdünnungsmittel, welches eine monofunktionelle Vinyletherverbindung umfasst; mindestens einen Photosäurebildner, der in einem ausgewählten oder beiden aus der mindestens einen monofunktionellen Vinyletherverbindung und dem mindestens einen Vinylether-Vernetzungsmittel mit mindestens zwei Vinylethergruppen löslich ist; und mindestens einen Stabilisator, der eine Esterverbindung umfasst, die selektiv entweder an einer Esterposition oder an einer Alphaposition und der Esterposition mit einem Substituenten substituiert ist. Es werden auch Prägeverfahren offenbart.
Abstract:
Vinylether-Resistformulierung, welche das Folgende umfasst:mindestens ein Vinylether-Vernetzungsmittel mit mindestens zwei Vinylethergruppen;mindestens ein Verdünnungsmittel, welches eine monofunktionelle Vinyletherverbindung umfasst;mindestens einen Photosäurebildner, der in einem ausgewählten oder beiden aus i) der monofunktionellen Vinyletherverbindung und ii) dem mindestens einen Vinylether-Vernetzungsmittel löslich ist; undmindestens einen Stabilisator, der eine Esterverbindung umfasst, die selektiv entweder i) an einer Esterposition oder ii) an einer Alphaposition und der Esterposition mit einem Substituenten substituiert ist, wobei die Esterverbindung die folgende Formel aufweist:wobei R1für einen Substituenten an der Alphaposition steht und R2für einen Substituenten an der Esterposition steht.
Abstract:
Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.
Abstract:
A resist pattern-forming method includes (1) applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film, the resist underlayer film-forming composition including (A) a polysiloxane, (2) applying a radiation-sensitive resin composition to the resist underlayer film to form a resist film, the radiation-sensitive resin composition including (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid, (3) exposing the resist film, and (4) developing the exposed resist film using a developer that includes an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition superior in EL performance, LWR performance and CDU performance.SOLUTION: A photoresist composition contains a polymer having a structural unit (I) represented by formula (1), and an acid generator.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing bicyclohexyl which is suitable as a liquid for immersion exposure having excellent transmittance at 193 nm by more reducing its absorbance. SOLUTION: Disclosed is a method of producing bicyclohexyl having an average light transmittance at a wavelength of 193 nm of ≥99.40% per 1 mm of the optical path length by bringing raw material bicyclohexyl into contact with an adsorbent, wherein the method comprises a step of bringing the raw material bicyclohexyl into contact with the adsorbent in an atmosphere of an inert gas having a purity of ≥99.999 vol%, and after the step of bringing the bicyclohexyl as a raw material into contact with the adsorbent, installing a storage tank for temporarily storing the bicyclohexyl before it is filled into a container, and performing substitution with an inert gas in the storage tank. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To enable further reducing the absorbance of bicyclohexyl suitable as a liquid for liquid-immersion exposure with high light transmittance at 193 nm wavelength. SOLUTION: A method for producing bicyclohexyl whose light transmittance at 193 nm wavelength is 99% or higher per mm optical path length of the liquid is provided, comprising the step of bringing a raw material bicyclohexyl into contact with a mixed oxide containing SiO 2 and Al 2 O 3 ; wherein the above mixed oxide is at least one selected from silica-alumina and zeolite, and the zeolite and the silica-alumina are 2-300 mol/mol in SiO 2 /Al 2 O 3 ratio, respectively. COPYRIGHT: (C)2009,JPO&INPIT