Composition for resist underlayer film
    1.
    发明专利
    Composition for resist underlayer film 审中-公开
    耐下层膜的组合物

    公开(公告)号:JP2008170984A

    公开(公告)日:2008-07-24

    申请号:JP2007324033

    申请日:2007-12-14

    Abstract: PROBLEM TO BE SOLVED: To obtain a composition for a resist underlayer film disposed between a resist and an antireflection film, having both of adhesion to the resist and resistance to a resist developing solution, and further having resistance to oxygen ashing in resist removal.
    SOLUTION: The composition for a resist underlayer film comprises: (A) both or either of a hydrolysate and a condensate of a silane compound; (B) a compound generating an acid by ultraviolet irradiation and/or heating (e.g., bis(4-t-butylphenyl)iodonium camphorsulfonate); and (C) a catalyst (e.g., maleic acid). The silane compound is at least one compound selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane and tetraphenoxysilane.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:为了获得设置在抗蚀剂和抗反射膜之间的抗蚀剂下层膜的组合物,其具有对抗蚀剂的粘附性和对抗蚀剂显影溶液的抗性,并且还具有抗氧化剂抗氧化性的抗蚀剂 去除。 解决方案:用于抗蚀剂下层膜的组合物包括:(A)硅烷化合物的水解产物和缩合物中的任一种; (B)通过紫外线照射和/或加热产生酸的化合物(例如双(4-叔丁基苯基)碘鎓樟脑磺酸盐); 和(C)催化剂(例如马来酸)。 硅烷化合物是选自四甲氧基硅烷,四乙氧基硅烷,四正丙氧基硅烷,四异丙氧基硅烷和四苯氧基硅烷中的至少一种化合物。 版权所有(C)2008,JPO&INPIT

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JPH11167201A

    公开(公告)日:1999-06-22

    申请号:JP28181998

    申请日:1998-10-02

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide the radiation sensitive resin composition capable of being applied in a uniform film thickness with a small coating amount and not liable to cause pattern defect and capable of forming a resist pattern superior in pattern profiles and high in resolution with high sensitivity and suitable for a positive resist. SOLUTION: This radiation sensitive resin composition comprises (1) an alkali-soluble resin, (2) a quinonediazido compound, and (3) a mixed solvent containing a 7-14C monoketone and alkyl alkoxypropionate in a weight proportion of 10/90-90/10.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JPH10221844A

    公开(公告)日:1998-08-21

    申请号:JP4304197

    申请日:1997-02-12

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide the radiation sensitive resin composition high in resolution and very little in deterioration of sensitivity and small in a stationary wave effect and superior in focus allowance and heat resistance and developability by incorporating an alkali-soluble resin and a specified compound and a 1,2- quinonediazido compound other than this compound. SOLUTION: The radiation sensitive resin composition contains (1) the alkali- soluble resin, (2) the compound represented by the formula, and (3) the 1,2- quinonediazido compound other than the compound (2). In the formula, each of R -R is, independently, an H or halogen atom of an alkyl or alkoxy or aryl or nitro group of a group represented by -OD; and D is an H atom or a group comprising a quinonediazido group. It is preferred to use a novolak resin as the alkali-soluble resin. An amount of the compound represented by the formula to be used is 0.5-50weight%, preferably, 1-30 weight % of the alkali- soluble resin.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JPH10148935A

    公开(公告)日:1998-06-02

    申请号:JP32481396

    申请日:1996-11-20

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin composition high in resolution, sensitivity, developability, focus allowance and heat resistance as a positive resist, and capable of forming a pattern good in form reduced in stationary wave effect by incorporating an alkali-soluble resin and a specified compound. SOLUTION: This resin composition comprises the alkali-soluble resin and one of the compounds represented by formulae I and II and a 1,2-quinonediazido compound except the above compounds, and in formulae I and II, D is an H atom or an organic group having the 1,2-quinonediazido group; each of R1 -R7 is an H or halogen atom or an alkyl, aryl, nitro, cyano, hydroxy-alkyl, hydroxyalkoxy, or -OD group; X is an H or halogen atom or a cyano group; and Y is an O or S atom.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JPH10142784A

    公开(公告)日:1998-05-29

    申请号:JP34700697

    申请日:1997-12-01

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin compsn. effectively suppressing the generation of scum at the time of forming a resist pattern, excellent in developability, having high sensitivity and suitable for use as a positive resist excellent in heat resistance and the rate of a residual film by incorporating alkali-soluble novolak resin, a specified 1,2-quinonediazido compd. and a dissolution accelerator. SOLUTION: This radiation sensitive resin compsn. contains alkali-soluble novolak resin, a 1,2-quinonediazido compd. represented by formula I and a dissolution accelerator. In the formula I, D is H or an org. group having a 1,2-quinonediazido group and a part or all of D's are org. group each having a 1,2-quinonediazido group. The novolak resin is preferably obtd. by polycondensing phenol represented by formula II and aldehyde. In the formula II, (n) is an integer of 1-3.

    RADIATION-SENSITIVE RESIN COMPOSITION

    公开(公告)号:JPH10115915A

    公开(公告)日:1998-05-06

    申请号:JP28756396

    申请日:1996-10-09

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition high in resolution and sensitivity and superior in developability and restrained in a stational wave effect and capable of obtaining a good pattern form, by incorporating an alkali- soluble resin and a specified compound and a 1,2-quinonediazido compound. SOLUTION: The radiation-sensitive resin composition contains the alkali- soluble resin and the 1,2-quinonediazido compound and a compound represented by the formula in which each of R1 -R4 is a halogen atom or an alkyl, alkoxy, aryl, nitro, cyano, hydroxyalkyl, hydroxyalkoxy, or -OD group; (where, D is H atom or a group containing a 1,2-qdz group); each of (a)-(d) is an integer of 1-3 satisfying the following expressions: 0

    Antireflective film for plasma display front plate and its manufacturing method
    8.
    发明专利
    Antireflective film for plasma display front plate and its manufacturing method 审中-公开
    等离子体显示板的抗反射膜及其制造方法

    公开(公告)号:JP2005114852A

    公开(公告)日:2005-04-28

    申请号:JP2003346086

    申请日:2003-10-03

    CPC classification number: G02B1/111 Y10T428/265

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflective film for a plasma display front plate which is excellent in antireflection characteristics, transparency, near-infrared-ray shielding property, color tone correction property, and antistatic property, and its manufacturing method. SOLUTION: The antireflective film for the plasma display front plate is constituted by providing on at least one surface of a base material a hard coat layer, a conductive layer made of a conductive polymer, a high-refractive-index layer, and a low-refractive-index layer in arbitrary order. Consequently, adhesion between the conductive layer and the base material can be increased when a monomer such as thiophene is formed on the surface of the base material by vapor-phase polymerization. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题:提供一种防反射特性,透明性,近红外线屏蔽性,色调校正性,抗静电性优异的等离子体显示面板用防反射膜及其制造方法。 解决方案:用于等离子体显示器前板的抗反射膜是通过在基材的至少一个表面上设置硬涂层,由导电聚合物制成的导电层,高折射率层和 低折射率层。 因此,当通过气相聚合在基材的表面上形成单体如噻吩时,可以增加导电层和基材之间的粘合性。 版权所有(C)2005,JPO&NCIPI

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2002311575A

    公开(公告)日:2002-10-23

    申请号:JP2001115932

    申请日:2001-04-13

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition retaining good sensitivity, excellent in resolution and margin for exposure and suitable for use in a positive type resist giving a good pattern shape and having good balance of characteristics. SOLUTION: The radiation sensitive resin composition has (A) an alkali- soluble resin, (B) a quinonediazidosulfonic ester compound and (C) an ester compound of an aliphatic dibasic acid represented by formula (1) (where R1 and R2 are each a 1-6C alkyl and R3 is methylene or a 2-6C alkylene).

    RADIATION SENSITIVE COMPOSITION
    10.
    发明专利

    公开(公告)号:JP2000066405A

    公开(公告)日:2000-03-03

    申请号:JP22883399

    申请日:1999-08-12

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To attain effective sensitivity to various radiations, to improve resolution, pattern shape, PED stability, etc., to reduce baking temp. dependency and to enhance process stability by incorporating a compd. having a specified substituent, a specified polymer having a specified ratio of wt. average mol. wt. (Mw) expressed in terms of polystyrene to number average mol. wt. (Mn) expressed in terms of polustyrence and a radiation sensitive acid generating agent. SOLUTION: The radiation sensitive compsn. contains a compd. having -C(= O)-OC(CH3)3 as a substituent having an acid cleavable t-butyl group, a polymer having acid decomposable acetal or ketal groups and an Mw to Mn ration 1-3 and 0.1-20 pts.wt., preferably 0.5-10 pts.wt. radiation sensitive acid generating agent based on 100 pts.wt. polymer.

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