Abstract:
A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A and A are an acid-dissociable monovalent organic group, R is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.
Abstract:
A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A and A are an acid-dissociable monovalent organic group, R is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.
Abstract:
PROBLEM TO BE SOLVED: To provide a chemically amplified positive radiation-sensitive resin composition that is superior in roughness, etching resistance, sensitivity and resolution, capable of stably forming a fine pattern with high accuracy, and suitable for use as a resin composition for EB or EUV, effectively sensitive to an electron beam or extreme-ultraviolet radiation. SOLUTION: The positive radiation-sensitive resin composition contains a radiation-sensitive acid generator (A), capable of generating an acid upon irradiation with radiation, an acid-dissociable group-containing resin (B) which is alkali-insoluble or slightly alkali-soluble and becomes readily alkali-soluble by the action of an acid; an acid propagator (C) capable of generating an acid in a chain reaction by the action of an acid; and a photosensitive basic compound (D), which loses its basicity upon irradiation with radiation, wherein the acid propagator (C) is a compound, having a sulfonate group represented by Formula (1) on a carbon-ring skeleton. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin excellent in the resolution performance, sensitivity and latitude of exposure. SOLUTION: The copolymer concerned is obtained by copolymerizing a monomer expressed by formula (1) (wherein, R 1 is a hydrogen atom or a methyl group; and R 2 and R 3 are each a saturated hydrocarbyl group) and monomers containing a monomer having a specific tertiary ether group and then by hydrolyzing with an acid perfectly an acid-dissociative group of the monomer expressed by formula (1) and besides by hydrolyzing a part of the acid-dissociative group of the monomer. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resist composition suitable for use in fine pattern formation with an electron beam or extreme-ultraviolet radiation. SOLUTION: The positive radiation sensitive resin composition contains a radiation-sensitive acid generator (A) which is at least one compound selected from among a sulfonyloxyimide compound, a sulfonium salt compound, an iodonium salt compound and a diazonium salt compound, an acid dissociable group-containing resin (B) which is alkali-insoluble or slightly alkali-soluble but becomes readily alkali-soluble by the action of acid, and an acid diffusion control agent (C), and the composition is patterned with EB, X-rays or EUV wherein the acid generator (A) is contained in an amount of 20-80 pts.wt. and the acid diffusion control agent (C) in an amount of 0.1-1 pt.wt., based on 100 pts.wt. of the acid dissociable group-containing resin (B). COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a polysiloxane which can give a radiation-sensitive resin composition having a high transparency to light of a wavelength of 193 nm or shorter and being highly sensitive, and excellent in dry etching resistance, developability, adhesion to a substrate, or the like, to provide a method for producing the same, and to obtain a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: The polysiloxane is an alkali-insoluble or difficulty alkali-soluble acid-dissociable-group-containing polysiloxane which becomes alkali-soluble when the acid-dissociable groups are dissociated and has an Mw/Mn ratio of at most 2.5. The polysiloxane is produced by a method having a step of polycondensing a starting silane compound in the presence of an acid catalyst.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern to stably form a fine pattern with high accuracy and excellent in roughness, etching durability, sensitivity and resolution, and to provide a medium for post exposure baking on applying an electric field effective for the method. SOLUTION: The method for forming a fine pattern having high sensitivity is carried out by using a chemically amplified positive resist or a chemically amplified negative resist. The method includes steps of forming a resist film 11 comprising the chemically amplified positive resist or chemically amplified negative resist on a substrate 10, irradiating the resist film 11 with radiation to produce an acid, disposing a medium 12 satisfying the following conditions (I), (II) on the resist film on heating the film after irradiation with radiation, and applying an electric field on the resist film 11. The conditions are: (I) the medium has ≥0.01 μS/cm electric conductivity; and (II) the medium has low dissolving property with the resist film and when the medium is left to stand at 23°C for 60 seconds and removed with water, it satisfies (the resist film thickness after removing with water)/(the resist film thickness before the medium is deposited)×100≥95. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a resist composition adequate for micropattern formation by electron beams and X-rays. SOLUTION: The resist composition contains an acid generating agent having the structure of formula (1) and a resin having a functional group to increase solubility in an alkali by the effect of an acid, in which the resolution in forming the patterns of the resist composition is ≤90 nm. In the formula, R denotes a univalent organic group of ≤50wt% in fluorine content, nitro group, cyano group or hydrogen atom; Z 1 and Z 2 mutually independently denote fluorine atoms, or 1-10C straight chain- or branch-like perfluroalkyl groups. Accordingly, the resist composition can achieve sensitivity, resolution, roughness, and more particularly high resolution. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To ensure excellence in roughness, etching resistance, sensitivity and resolution and to accurately and stably form a fine pattern. SOLUTION: The radiation-sensitive resin composition contains a polymer having an onium salt structural unit represented by formula (1) and/or formula (2) as a repeating unit, wherein R 1 represents H, halogen, cyano, a 1-5C linear or branched alkyl or haloalkyl; R 2 and R 3 each independently represent a substituted or unsubstituted 1-10C linear or branched alkyl, alkoxy or haloalkyl or a 6-20C aryl; A 1 represents a single bond, an ether bond, an ester bond or an amido bond; and X - represents an anion. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation:要解决的问题:确保粗糙度,耐蚀刻性,灵敏度和分辨率的卓越性,并精确而稳定地形成精细图案。 解决方案:该辐射敏感性树脂组合物含有具有由式(1)和/或式(2)表示的鎓盐结构单元作为重复单元的聚合物,其中R 1表示H ,卤素,氰基,1-5C直链或支链烷基或卤代烷基; R 2 SP>和R 3 SP>各自独立地表示取代或未取代的1-10C直链或支链烷基,烷氧基或卤代烷基或6-20C芳基; A 1 SP>表示单键,醚键,酯键或酰胺键; 而X - SP>表示阴离子。 版权所有(C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition containing a specified polysiloxane, having high transparency to radiation of and X are each a monovalent organic group which is dissociated by an acid and generates H or H (but the case of X =H is excluded); R" is H, methyl or trifluoromethyl; and (m) and (n) are each an integer of 0-3.