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公开(公告)号:US11824132B2
公开(公告)日:2023-11-21
申请号:US17603031
申请日:2020-04-23
Inventor: Bin Xin , Iman S. Roqan
IPC: H01L31/08 , G01T1/24 , H01L31/0224 , H01L31/032
CPC classification number: H01L31/085 , G01T1/241 , H01L31/022408 , H01L31/032
Abstract: An X-ray system includes an X-ray generation unit configured to generate X-rays; an X-ray detection unit including at least one X-ray sensor that includes an indirect bandgap, perovskite semiconductor material, the X-ray sensor being configured to record the X-rays; and a control unit that controls a generation of the X-rays and a detection of the X-rays at the X-ray detection unit.
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公开(公告)号:US12195348B2
公开(公告)日:2025-01-14
申请号:US17272960
申请日:2019-09-05
Inventor: Bin Xin , Iman Roqan , Yuhai Zhang , Somak Mitra , Yusin Pak
IPC: H01L31/032 , C01G21/00 , H01L31/0352 , H01L31/18
Abstract: A method for forming CsPbBr3 perovskite nanocrystals into a two-dimensional (2D) nanosheet includes providing CsPbBr3 perovskite nanocrystals; mixing the CsPbBr3 perovskite nanocrystals into a mixture of a first solvent and a second solvent, to form a solution of the CsPbBr3 perovskite nanocrystals, the first solvent, and the second solvent; and forming an optoelectronic device by patterning the CsPbBr3 perovskite nanocrystals into a nanosheet, between first and second electrodes. The first solvent is selected to evaporate before the second solvent.
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公开(公告)号:US12005445B2
公开(公告)日:2024-06-11
申请号:US17323228
申请日:2021-05-18
Inventor: Bin Xin , Iman S. Roqan
IPC: G01N33/68 , A01N1/02 , B01L3/00 , B81B1/00 , B81C1/00 , C07C309/65 , C07C309/73 , F04B43/12 , G01N1/40 , G01N21/33 , G01N21/64 , G01N33/52 , G01N35/10
CPC classification number: B01L3/502715 , B81B1/006 , B81C1/00119 , B01L2200/10 , B01L2300/0663 , B01L2300/0819 , B81B2201/05 , B81B2203/033 , B81B2203/0338 , B81B2203/04 , B81C2201/0197
Abstract: A method for making ion-crystal semiconductor material based micro- and/or nanowires, MNWs, embedded into a semiconductor substrate, includes forming a structure into the semiconductor substrate, wherein the structure has each of a width and a depth less than 10 μm; pumping an ion-crystal semiconductor material as an ion solution into the structure, wherein the pumping is achieved exclusively due to capillary forces; flowing the ion solution through the structure to fill the structure; crystallizing the ion-crystal semiconductor material inside the structure to form the MNWs; and adding electrodes to ends of the MNWs.
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