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    Method and system for creating or performing dynamic sampling scheme for process in measurement performed on wafer
    3.
    发明专利
    Method and system for creating or performing dynamic sampling scheme for process in measurement performed on wafer 有权
    用于创建或执行在WAFER中执行的测量过程的动态采样方案的方法和系统

    公开(公告)号：JP2013153167A

    公开(公告)日：2013-08-08

    申请号：JP2013015975

    申请日：2013-01-30

    Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation

    Inventor： PAVEL IZIKSON ,  JOHN ROBINSON ,  MIKE ADEL ,  AMIR WIDMANN ,  CHOI DONGSUB ,  ANAT MARCHELLI

    IPC: H01L21/66 ,  G01B11/22 ,  H01L21/027

    CPC classification number: G05B21/02 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide methods for creating or performing a dynamic sampling scheme for a measurement process on wafers, which can be used to increase accuracy of process monitoring and control.SOLUTION: A method for creating a dynamic sampling scheme for a process during which measurement is performed on wafers includes performing measurement on all of wafers in at least one lot at all measurement spots. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process on the basis of results of the measurement. The thresholds correspond to measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme for the measurement are to be used for the process.

    Abstract translation: 要解决的问题：提供用于创建或执行用于晶片测量过程的动态采样方案的方法，可用于提高过程监控和控制的精度。解决方案：一种用于为过程创建动态采样方案的方法 在晶片上执行的测量包括在所有测量点处对至少一批中的所有晶片进行测量。 该方法还包括基于测量结果确定用于该过程的动态采样方案的最佳采样方案，增强采样方案，减少采样方案和阈值。 阈值对应于将用于该过程的最佳采样方案，增强采样方案和用于测量的简化采样方案的测量。

    OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION
    4.
    发明专利
    OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 未知

    公开(公告)号：SG11201906278WA

    公开(公告)日：2019-08-27

    申请号：SG11201906278W

    申请日：2018-01-24

    Applicant: KLA TENCOR CORP

    Inventor： ADEL MICHAEL A ,  MANASSEN AMNON ,  PIERSON WILLIAM ,  LEVY ADY ,  SUBRAHMANYAN PRADEEP ,  YERUSHALMI LIRAN ,  CHOI DONGSUB ,  HEO HOYOUNG ,  ALUMOT DROR ,  ROBINSON JOHN

    IPC: H01L21/027 ,  G03F7/20

    Abstract: CONTROLLER :ios I 1110 I I PROCESSORS I MEMORY 126 122 124 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 02 August 2018 (02.08.2018) WIP0 I PCT ill mu °million °nolo olomollm loll mum oimiE (10) International Publication Number WO 2018/140534 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/027 (2006.01) (21) International Application Number: PCT/US2018/015104 (22) International Filing Date: 24 January 2018 (24.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/450,454 25 January 2017 (25.01.2017) US 15/867,485 10 January 2018 (10.01.2018) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: ADEL, Michael A.; 14 Yigal Alon Street, 30900 Ya'akov Zichron (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). PIERSON, William; 5212 Keene Cove, Austin, Texas 78730 (US). LEVY, Ady; 1323 Glen Eyrie Avenue, San Jose, California 95125 (US). SUBRAHMANYAN, Pradeep; 22117 Wallace Dri- ve, Cupertino, California 95014 (US). YERUSHALMI, Liran; 43 Inbar, 30900 Zicron Yaacob (IL). CHOI, Dongsub; Hyundae Hometown 102-501, Seocheon-dong, Kiheung-Ku, Kyunggi Province, Yongin City 446-960 (KR). HEO, Hoyoung; 464-816,11-9, Namhansanseong- ro, 792 Beon-gil, Gwangju-si, Gyeonggi-do 31250 (KR). ALUMOT, Dror; 1 Einstein St., 7647001 Rehovot (IL). ROBINSON, John; 4000 North Hills Drive, Austin, Texas 78731 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = (54) Title: OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 102 112 114 148 118 116 O 00 O C 120 4111111111111111 FIG.1 B (57) : A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample. [Continued on next page] WO 2018/140534 Al MIDEDIMODOMMERIOMMHOIREHOMMEMOIMIE CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

    ADVANCED PROCESS CONTROL OPTIMIZATION
    6.
    发明申请
    ADVANCED PROCESS CONTROL OPTIMIZATION 审中-公开
    高级过程控制优化

    公开(公告)号：WO2011159625A3

    公开(公告)日：2012-04-05

    申请号：PCT/US2011040216

    申请日：2011-06-13

    Applicant: KLA TENCOR CORP ,  CHOI DONGSUB ,  WIDMANN AMIR ,  KANDEL DANIEL ,  TIEN DAVID

    Inventor： CHOI DONGSUB ,  WIDMANN AMIR ,  KANDEL DANIEL ,  TIEN DAVID

    IPC: H01L21/027

    CPC classification number: G03F7/70525

    Abstract: A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.

    Abstract translation: 用于自动过程控制（APC）性能监控的方法可以包括但不限于：计算一个或多个半导体器件生产批次的一个或多个APC性能指标; 以及将所述一个或多个APC性能指示符的映射显示给所述一个或多个半导体器件的生产批次。

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