公开(公告)号：EP2537180A4

公开(公告)日：2016-05-04

申请号：EP11745086

申请日：2011-02-14

Applicant: KLA TENCOR CORP

Inventor： IZIKSON PAVEL ,  KANDEL DANIEL ,  ROBINSON JOHN

IPC: H01L21/66 ,  H01L21/027

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

Abstract translation: 本发明可以包括经由在全知采样处理的第一批晶圆的晶片上执行第一测量，计算第一组处理工具可校正值的利用通过在全知采样过程所执行的测量的一个或多个结果，随机地选择一个 集的第一批晶圆的晶片的场的采样位置的，通过施加到内插处理，以随机选择的组场采样位置的，worin内插处理计算第二组处理工具可校正值的利用来自所述第一组工艺的值 工具可校正值用于为了计算可校正值对未包括在所述一组随机选择的视野的第一批次的晶片的字段中的随机选择的组场采样位置的，和确定性采矿子采样方案，通过比较所述第一组处理工具的 可校正值到第二组可校正值的。

公开(公告)号：WO2011103048A3

公开(公告)日：2012-03-01

申请号：PCT/US2011024689

申请日：2011-02-14

Applicant: KLA TENCOR CORP ,  IZIKSON PAVEL ,  KANDEL DANIEL ,  ROBINSON JOHN

Inventor： IZIKSON PAVEL ,  KANDEL DANIEL ,  ROBINSON JOHN

IPC: H01L21/66 ,  H01L21/027

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

Abstract translation: 本发明可以包括通过无所不在的采样处理在第一批晶片的晶片上进行第一测量，利用通过全方位采样过程执行的一个或多个测量结果来计算第一组处理工具校正值，随机选择 第一批晶片的晶片的一组场采样位置，通过对随机选择的一组场采样位置应用内插处理来计算第二组处理工具可校正值，其中所述内插处理利用来自第一组处理的值 用于随机选择的一组场采样位置的工具可校正，以便计算不包括在随机选择的场的集合中的第一批的晶片的场的可校正性，以及通过比较第一组处理工具来确定子采样方案 可纠正到第二组可纠正的。

公开(公告)号：WO2011026055A2

公开(公告)日：2011-03-03

申请号：PCT/US2010047197

申请日：2010-08-31

Applicant: KLA TENCOR CORP ,  CHOI DONGSUB ,  WIDMANN AMIR ,  SAIDIN ZAIN ,  LASKE FRANK ,  ROBINSON JOHN

Inventor： CHOI DONGSUB ,  WIDMANN AMIR ,  SAIDIN ZAIN ,  LASKE FRANK ,  ROBINSON JOHN

IPC: H01L21/027 ,  G03F1/08

CPC classification number: G03F7/70683 ,  G03F7/70633 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.

Abstract translation: 公开了组合的计量标记，系统和用于计算半导体电路上的对准的方法。 组合的计量标记可以包括掩模对准结构和晶片重叠标记结构。

公开(公告)号：SG11201708135YA

公开(公告)日：2017-11-29

申请号：SG11201708135Y

申请日：2016-04-05

Applicant: KLA TENCOR CORP

Inventor： LEVY ADY ,  KANDEL DANIEL ,  ADEL MICHAEL E ,  POSLAVSKY LEONID ,  ROBINSON JOHN ,  MARCIANO TAL ,  BRINGOLTZ BARAK ,  GRUNZWEIG TZAHI ,  KLEIN DANA ,  ITZKOVICH TAL ,  CARMEL NADAV ,  AMIR NURIEL ,  RAMANATHAN VIDYA ,  CAMP JANAY ,  WAGNER MARK

IPC: H01L21/66 ,  G01N21/95

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

公开(公告)号：SG11201906278WA

公开(公告)日：2019-08-27

申请号：SG11201906278W

申请日：2018-01-24

Applicant: KLA TENCOR CORP

Inventor： ADEL MICHAEL A ,  MANASSEN AMNON ,  PIERSON WILLIAM ,  LEVY ADY ,  SUBRAHMANYAN PRADEEP ,  YERUSHALMI LIRAN ,  CHOI DONGSUB ,  HEO HOYOUNG ,  ALUMOT DROR ,  ROBINSON JOHN

IPC: H01L21/027 ,  G03F7/20

Abstract: CONTROLLER :ios I 1110 I I PROCESSORS I MEMORY 126 122 124 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 02 August 2018 (02.08.2018) WIP0 I PCT ill mu °million °nolo olomollm loll mum oimiE (10) International Publication Number WO 2018/140534 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/027 (2006.01) (21) International Application Number: PCT/US2018/015104 (22) International Filing Date: 24 January 2018 (24.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/450,454 25 January 2017 (25.01.2017) US 15/867,485 10 January 2018 (10.01.2018) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: ADEL, Michael A.; 14 Yigal Alon Street, 30900 Ya'akov Zichron (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). PIERSON, William; 5212 Keene Cove, Austin, Texas 78730 (US). LEVY, Ady; 1323 Glen Eyrie Avenue, San Jose, California 95125 (US). SUBRAHMANYAN, Pradeep; 22117 Wallace Dri- ve, Cupertino, California 95014 (US). YERUSHALMI, Liran; 43 Inbar, 30900 Zicron Yaacob (IL). CHOI, Dongsub; Hyundae Hometown 102-501, Seocheon-dong, Kiheung-Ku, Kyunggi Province, Yongin City 446-960 (KR). HEO, Hoyoung; 464-816,11-9, Namhansanseong- ro, 792 Beon-gil, Gwangju-si, Gyeonggi-do 31250 (KR). ALUMOT, Dror; 1 Einstein St., 7647001 Rehovot (IL). ROBINSON, John; 4000 North Hills Drive, Austin, Texas 78731 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = (54) Title: OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 102 112 114 148 118 116 O 00 O C 120 4111111111111111 FIG.1 B (57) : A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample. [Continued on next page] WO 2018/140534 Al MIDEDIMODOMMERIOMMHOIREHOMMEMOIMIE CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))