프로세스 감응성 계측 시스템 및 방법
    1.
    发明公开
    프로세스 감응성 계측 시스템 및 방법 审中-公开
    过程灵敏度测量系统和方法

    公开(公告)号:KR20180030722A

    公开(公告)日:2018-03-23

    申请号:KR20187007128

    申请日:2016-08-12

    CPC classification number: G03F7/70558 G03F7/70091 G03F7/70641

    Abstract: 리소그래피시스템은조명소스및 투영광학장치의세트를포함한다. 조명소스는축외조명폴로부터의조명의빔을패턴마스크로지향시킨다. 패턴마스크는조명폴로부터의조명을포함하는회절빔의세트를생성하기위한패턴엘리먼트의세트를포함한다. 투영광학장치의세트에의해수신되는회절빔의세트중 적어도두 개의회절빔은투영광학장치의세트의동공평면에서비대칭적으로분포된다. 회절빔의세트중 적어도두 개의회절빔은, 패턴엘리먼트의세트의이미지에대응하는제조엘리먼트의세트를형성하도록샘플에비대칭적으로입사한다. 샘플상의제조엘리먼트의세트는투영광학장치의세트의광학축을따르는샘플의위치의하나이상의지표를포함한다.

    Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将照明光束从离轴照明杆引导到图案掩模。 图案掩模包括一组图案元件,用于产生包括来自照明杆的照明的一组衍射束。 由该组投影光学器件接收的至少两组衍射光束不对称分布在该组投影光学器件的光瞳平面中。 至少两组衍射光束不对称地入射在样本上以形成对应于该组图案元素的图像的一组制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示符。

    OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION

    公开(公告)号:SG11201906278WA

    公开(公告)日:2019-08-27

    申请号:SG11201906278W

    申请日:2018-01-24

    Abstract: CONTROLLER :ios I 1110 I I PROCESSORS I MEMORY 126 122 124 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 02 August 2018 (02.08.2018) WIP0 I PCT ill mu °million °nolo olomollm loll mum oimiE (10) International Publication Number WO 2018/140534 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/027 (2006.01) (21) International Application Number: PCT/US2018/015104 (22) International Filing Date: 24 January 2018 (24.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/450,454 25 January 2017 (25.01.2017) US 15/867,485 10 January 2018 (10.01.2018) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: ADEL, Michael A.; 14 Yigal Alon Street, 30900 Ya'akov Zichron (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). PIERSON, William; 5212 Keene Cove, Austin, Texas 78730 (US). LEVY, Ady; 1323 Glen Eyrie Avenue, San Jose, California 95125 (US). SUBRAHMANYAN, Pradeep; 22117 Wallace Dri- ve, Cupertino, California 95014 (US). YERUSHALMI, Liran; 43 Inbar, 30900 Zicron Yaacob (IL). CHOI, Dongsub; Hyundae Hometown 102-501, Seocheon-dong, Kiheung-Ku, Kyunggi Province, Yongin City 446-960 (KR). HEO, Hoyoung; 464-816,11-9, Namhansanseong- ro, 792 Beon-gil, Gwangju-si, Gyeonggi-do 31250 (KR). ALUMOT, Dror; 1 Einstein St., 7647001 Rehovot (IL). ROBINSON, John; 4000 North Hills Drive, Austin, Texas 78731 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = (54) Title: OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 102 112 114 148 118 116 O 00 O C 120 4111111111111111 FIG.1 B (57) : A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample. [Continued on next page] WO 2018/140534 Al MIDEDIMODOMMERIOMMHOIREHOMMEMOIMIE CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

    SYSTEMS AND METHODS FOR FOCUS-SENSITIVE METROLOGY TARGETS

    公开(公告)号:WO2018129088A1

    公开(公告)日:2018-07-12

    申请号:PCT/US2018012249

    申请日:2018-01-03

    CPC classification number: G03F7/70641

    Abstract: A lithography system includes an illumination source, one or more projection optical elements, and a pattern mask. The illumination source includes one or more illumination poles. The pattern mask includes a set of focus-sensitive mask elements periodically distributed with a pitch, wherein the set of focus-sensitive mask elements is configured to diffract illumination from the one or more illumination poles. The pitch is selected such that two diffraction orders of illumination associated with each of the one or more illumination poles are asymmetrically distributed in a pupil plane of the one or more projection optical elements. Further, the one or more projection optical elements are configured to expose a sample with an image of the set of focus-sensitive pattern mask elements based on the two diffraction orders of illumination associated with each of the one or more illumination poles. Additionally, one or more printing characteristics of the image of the set of focus-sensitive pattern mask elements on the sample is indicative of a position of the sample within a focal volume of the one or more projection optical elements.

    ARRANGEMENT OF RETICLE POSITIONING DEVICE FOR ACTINIC INSPECTION OF EUV RETICLES
    4.
    发明公开
    ARRANGEMENT OF RETICLE POSITIONING DEVICE FOR ACTINIC INSPECTION OF EUV RETICLES 审中-公开
    安排RETIKELPOSITIONIERUNGSVORRICHTUNG辐射调查EUV光罩作者:

    公开(公告)号:EP2836874A4

    公开(公告)日:2016-04-27

    申请号:EP13775812

    申请日:2013-04-10

    CPC classification number: G01N21/01 G03F1/84

    Abstract: A reticle positioning apparatus for actinic EUV reticle inspection including a sealed inspection chamber containing a reticle stage for holding a reticle. The reticle stage has a magnetically suspended upper stage with a long travel in a “y” direction and a magnetically suspended lower stage with a long travel in an “x” direction; and a cable stage chamber isolated from the inspection chamber by a cable chamber wall. The cable stage chamber has a cable stage movable in the “y” direction; and a tube connected at one end to the reticle stage and to the cable stage at the other end. The tube passes from the cable stage through the inspection chamber through a seal in the chamber wall and opening into the cable entry chamber for entry of cables and hoses within the cable stage chamber, which cables and hoses pass through the tube to the reticle stage.

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