公开(公告)号：KR20180030722A

公开(公告)日：2018-03-23

申请号：KR20187007128

申请日：2016-08-12

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  KAPASI SANJAY ,  PANDEV STILLIAN ,  SANKO DIMITRY ,  SUBRAHMANYAN PRADEEP ,  LEVY ADY

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: 리소그래피시스템은조명소스및 투영광학장치의세트를포함한다. 조명소스는축외조명폴로부터의조명의빔을패턴마스크로지향시킨다. 패턴마스크는조명폴로부터의조명을포함하는회절빔의세트를생성하기위한패턴엘리먼트의세트를포함한다. 투영광학장치의세트에의해수신되는회절빔의세트중 적어도두 개의회절빔은투영광학장치의세트의동공평면에서비대칭적으로분포된다. 회절빔의세트중 적어도두 개의회절빔은, 패턴엘리먼트의세트의이미지에대응하는제조엘리먼트의세트를형성하도록샘플에비대칭적으로입사한다. 샘플상의제조엘리먼트의세트는투영광학장치의세트의광학축을따르는샘플의위치의하나이상의지표를포함한다.

Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将照明光束从离轴照明杆引导到图案掩模。 图案掩模包括一组图案元件，用于产生包括来自照明杆的照明的一组衍射束。 由该组投影光学器件接收的至少两组衍射光束不对称分布在该组投影光学器件的光瞳平面中。 至少两组衍射光束不对称地入射在样本上以形成对应于该组图案元素的图像的一组制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示符。

公开(公告)号：EP3295478A1

公开(公告)日：2018-03-21

申请号：EP16793288

申请日：2016-05-07

Applicant: KLA TENCOR CORP

Inventor： PANDEV STILIAN ,  KAPASI SANJAY ,  SMITH MARK D ,  LEVY ADY

IPC: H01L21/66

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.