Abstract:
PROBLEM TO BE SOLVED: To provide a method of determining an overlay error between two layers of a multiple layer sample. SOLUTION: For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is determined by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system includes any one or more of a reflectometric system, polarimetric system, imaging system, interferometric system and/or scan angle system. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.
Abstract:
One embodiment relates to a method of measuring overlay errors for a programmable pattern, area-imaging electron beam lithography apparatus. Patterned cells of an overlay measurement target array may be printed in swaths such that they are superposed on patterned cells of a first (base) array. In addition, the overlay array may have controlled-exposure areas distributed within the swaths. The superposed cells of the overlay and base arrays are imaged. The overlay errors are then measured based on distortions between the two arrays in the image data. Alternatively, non-imaging methods, such as using scatterometry, may be used. Another embodiment relates to a method for correcting overlay errors for an electron beam lithography apparatus. Overlay errors for a pattern to be printed are determined based on within-swath exposure conditions. The pattern is then pre-distorted to compensate for the overlay errors. Other embodiments, aspects and features are also disclosed.