Abstract:
Ein lasergestütztes Plasma-Beleuchtungssystem beinhaltet mindestens eine Laserlichtquelle, um Licht bereitzustellen. Mindestens ein Reflektor fokussiert das Licht von der Laserlichtquelle in einem Brennpunkt des Reflektors. Ein im Wesentlichen mit einem Gas gefülltes Behältnis ist an oder nahe dem Brennpunkt des Reflektors positioniert. Das Licht von der Laserlichtquelle erhält ein in dem Behältnis eingeschlossenes Plasma zumindest teilweise aufrecht. Das Behältnis hat zumindest eine Wandung mit einer Dicke, welche ungleichmäßig ist, um optische Aberrationen in dem System zu kompensieren.
Abstract:
An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
Abstract:
Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.