PROCESS AWARE METROLOGY
    1.
    发明申请
    PROCESS AWARE METROLOGY 审中-公开
    过程技巧

    公开(公告)号:WO2013043831A3

    公开(公告)日:2013-05-23

    申请号:PCT/US2012056272

    申请日:2012-09-20

    Abstract: System and methods for process aware metrology are provided. The method compries the steps of selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, generating an initial model of the structure based on results of the simulating step, simulating the one or more characteristic of the structure that would be formed on the wafer using the one or more different values as input to the initial model, translating results of both of the simulating steps into the optical model of the structure, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

    Abstract translation: 提供过程感知度量的系统和方法。 该方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择标称值和一个或多个不同值的工艺参数的步骤,模拟将在晶片上形成的结构的一个或多个特性,使用 标称值,基于模拟步骤的结果生成结构的初始模型,使用一个或多个不同值作为初始模型的输入来模拟将在晶片上形成的结构的一个或多个特性,翻译结果 两个模拟步骤进入结构的光学模型,以及基于结构的一个或多个特性如何在至少两个标称值和一个或多个不同值之间变化来确定光学模型的参数化。

Patent Agency Ranking