전자 소스
    1.
    发明公开
    전자 소스 审中-公开
    电子来源

    公开(公告)号:KR20180031061A

    公开(公告)日:2018-03-27

    申请号:KR20187007328

    申请日:2016-08-12

    Abstract: 전자소스가대향하는제 1 및제 2 표면을갖는실리콘기판상에형성된다. 전자방출을향상시키기위해적어도하나의전계이미터가실리콘기판의제 2 표면상에준비된다. 실리콘의산화를방지하기위해, 얇고연속적인붕소층이산화및 결함을최소화하는공정을사용하여전계이미터의출력표면상에직접적으로배치된다. 전계이미터는피라미드및 둥근위스커와같은다양한형상을취할수 있다. 방출전류의빠르고정확한제어및 높은방출전류를달성하기위해하나또는여러개의선택적게이트층들이전계이미터팁의높이에또는그보다약간낮게배치될수 있다. 전계이미터는 p 형도핑될수 있고역 바이어스모드에서작동하도록구성될수 있거나, 전계이미터는 n 형도핑될수 있다.

    Abstract translation: 它被形成具有第一表面到第二mitje电子源计数器在硅衬底上。 至少一个仪表jeongyeyi在硅衬底的第二表面上而制备,以增强电子发射。 为了防止硅的氧化,使用最小化它直接布置在jeongyeyi米的输出表面上的薄的连续层氧化钛和硼的缺陷的方法。 字段具有已经chwihalsu多种形状,如金字塔形发射器和卷曲晶须。 为了实现一个或几个选择性的栅极层,发射电流的快速而精确的控制和高的发射电流可以略低于的尖端jeongyeyi微米或更小的高度被设置。 Jeongyeyi计来掺杂p型和任一被配置在反向偏置模式下操作,jeongyeyi计可以是掺杂的n型。

    저 노이즈 센서를 이용한 암시야 검사
    2.
    发明公开
    저 노이즈 센서를 이용한 암시야 검사 审中-公开
    使用低噪音传感器进行暗场检测

    公开(公告)号:KR20180031060A

    公开(公告)日:2018-03-27

    申请号:KR20187007275

    申请日:2016-08-13

    Abstract: 이미지센서에의해캡쳐되는아날로그이미지데이터값(전하)이, 이미지센서의출력감지노드(부유확산부) 상에서출력신호로서전송되기이전에또는전송되는동안비닝(결합)되고, ADC가출력감지노드각각의리셋사이에서복수의대응하는디지털이미지데이터값을순차적으로생성하도록제어되는검사시스템및 방법. 출력비닝방법에따르면, 이미지센서는각각의리셋사이에서출력감지노드상으로복수의전하를순차적으로전송하도록구동되고, ADC는, 각각의전하가출력감지노드상으로전송된이후, 점진적으로증가하는출력신호를변환하도록제어된다. 다중샘플링방법에따르면, 출력감지노드로전송되기이전에복수의전하는수직으로또는수평으로비닝(합산/결합)되고, ADC는각각의대응하는출력신호를복수회 샘플링한다. 출력비닝및 다중샘플링방법은결합될수도있다.

    Abstract translation: 的模拟图像数据值(电荷)由图像传感器(副浮动扩散)的图像传感器中,每个ADC失控力感测节点的被捕获,和分级(组合的),而转移或传输到作为输出感测节点上的输出信号被发送 并且在该组图像之间顺序地生成多个对应的数字图像数据值。 根据该功率比紧固方法,该图像传感器驱动到多个中的电荷传输到每个复位序列,ADC之间的输出感测节点,每次充电以后发送到输出感测节点,以逐渐增加的 并被控制来转换输出信号。 根据多重采样方法,多个电荷在被发送到输出感测节点之前被垂直或水平地合并(相加/组合),并且ADC对多个相应的输出信号进行采样。 输出分箱和多种采样方法可以结合使用。

    METHOD AND DEVICE MONITORING THICKNESS ON THE SPOT USING MULTIPLEX WAVE LENGTH SPECTROMETER DURING CHEMICAL AND MECHANICAL POLISHING

    公开(公告)号:JPH1177525A

    公开(公告)日:1999-03-23

    申请号:JP18677698

    申请日:1998-05-28

    Abstract: PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing (CMP) technique using a polishing tool and a thickness monitor to obtain the thickness of a substrate layer. SOLUTION: This invention is concerned with a device and a method monitoring the thickness of a substrate on the spot (work site) using a multiplex wave length spectrometer while chemical and mechanical polishing (CMP) is being processed using a polishing tool and a film thickness monitor 250, and an opening is provided for the tool. Monitoring windows 232 and 242 are fixed to the inside of the opening to form a monitoring channel. The film thickness monitor 250 observes the substrate by way of the monitoring channel so as to allow the film thickness supported over the substrate to be thereby indicated. This information is used for determining the finishing point of a CMP process, determining the quantity of removal in the arbitrarily given circumference of the substrate, determining the average quantity of removal over the whole surface of the substrate, determining the deviation of the quantity of removal over the whole surface of the substrate, and for optimizing the quantity of removal and uniformity. The thickness monitor is provided with a spectrometer.

    In-situ metalization monitoring using eddy current measurement or optical measurement
    6.
    发明专利
    In-situ metalization monitoring using eddy current measurement or optical measurement 有权
    使用EDDY电流测量或光学测量进行现场金属化监测

    公开(公告)号:JP2011164110A

    公开(公告)日:2011-08-25

    申请号:JP2011048928

    申请日:2011-03-07

    CPC classification number: B24B37/013 B24B49/105 G01N27/72

    Abstract: PROBLEM TO BE SOLVED: To provide a method of obtaining information in-situ regarding a film of a sample by using an eddy current probe, during a process for removing the film. SOLUTION: The eddy current probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy current probe. One or more first signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. A gain and/or distortion of a phase included in the first signals is calibrated based on the second signals. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes: a polishing table; a sample carrier arranged to hold the sample over the polishing table; and an eddy current probe. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种在去除膜的过程中通过使用涡流探针在原位获得样品的膜的方法。

    解决方案:涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的传感线圈上。 当感测线圈靠近样品的膜定位时,在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有固定的组成和/或与感测线圈的距离的参考材料定位时,在涡流探针的感测线圈中测量一个或多个第二信号。 基于第二信号校正包含在第一信号中的相位的增益和/或失真。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。 此外,公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括:抛光台; 布置成将样品保持在抛光台上的样品载体; 和涡流探头。 版权所有(C)2011,JPO&INPIT

    ANTI-REFLECTION LAYER FOR BACK-ILLUMINATED SENSOR
    9.
    发明申请
    ANTI-REFLECTION LAYER FOR BACK-ILLUMINATED SENSOR 审中-公开
    背照射传感器的防反射层

    公开(公告)号:WO2015147963A3

    公开(公告)日:2015-11-19

    申请号:PCT/US2015010672

    申请日:2015-01-08

    CPC classification number: H01L27/1462 H01L27/1464 H01L27/14685 H01L27/14687

    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

    Abstract translation: 用于短波长光的图像传感器包括半导体膜,形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性,即使在高通量下连续使用多年。 图像传感器可以使用CCD(电荷耦合器件)或CMOS(互补金属氧化物半导体)技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

    IN-SITU METALIZATION MONITORING USING EDDY CURRENT MEASUREMENTS AND OPTICAL MEASUREMENTS
    10.
    发明申请
    IN-SITU METALIZATION MONITORING USING EDDY CURRENT MEASUREMENTS AND OPTICAL MEASUREMENTS 审中-公开
    使用EDDY电流测量和光学测量的现场金属化监测

    公开(公告)号:WO0146684A9

    公开(公告)日:2002-05-23

    申请号:PCT/US0035358

    申请日:2000-12-22

    CPC classification number: B24B37/013 B24B49/105 G01N27/72

    Abstract: Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe.

    Abstract translation: 公开了一种在除去膜的过程中使用涡流探针在原位获取样品的膜的方法。 涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的感测线圈上。 当感测线圈靠近样品的膜定位时,在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有与感测线圈的固定成分和/或距离的参考材料定位时,在涡流探针的感测线圈中测量一个或多个第二信号。 第一信号基于第二信号进行校准,从而校正第一信号内的不期望的增益和/或相位变化。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。 此外,公开了一种用抛光剂抛光样品并监测样品的化学机械抛光(CMP)系统。 CMP系统包括抛光台,布置成将样品保持在抛光台上的样品载体和涡流探针。

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