Abstract:
PROBLEM TO BE SOLVED: To provide a method of determining an overlay error between two layers of a multiple layer sample. SOLUTION: For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is determined by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system includes any one or more of a reflectometric system, polarimetric system, imaging system, interferometric system and/or scan angle system. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To develop a method for an optical tool, the method being designed to use light that is at least partially absorbed by air, and having more efficient parging system. SOLUTION: The method includes: a step of measuring reflectivity measurement data, and dispersion and polarization analysis data for the specimen; a step of determining thickness of a nitroxide gate dielectric formed on the specimen from the reflectivity measurement data; a step of determining refractive index of the nitroxide gate dielectric from the thickness and dispersion and polarization analysis data; and a step of determining nitrogen concentration of the nitroxide gate dielectric from the refractive index. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing (CMP) technique using a polishing tool and a thickness monitor to obtain the thickness of a substrate layer. SOLUTION: This invention is concerned with a device and a method monitoring the thickness of a substrate on the spot (work site) using a multiplex wave length spectrometer while chemical and mechanical polishing (CMP) is being processed using a polishing tool and a film thickness monitor 250, and an opening is provided for the tool. Monitoring windows 232 and 242 are fixed to the inside of the opening to form a monitoring channel. The film thickness monitor 250 observes the substrate by way of the monitoring channel so as to allow the film thickness supported over the substrate to be thereby indicated. This information is used for determining the finishing point of a CMP process, determining the quantity of removal in the arbitrarily given circumference of the substrate, determining the average quantity of removal over the whole surface of the substrate, determining the deviation of the quantity of removal over the whole surface of the substrate, and for optimizing the quantity of removal and uniformity. The thickness monitor is provided with a spectrometer.
Abstract:
PROBLEM TO BE SOLVED: To provide a method of obtaining information in-situ regarding a film of a sample by using an eddy current probe, during a process for removing the film. SOLUTION: The eddy current probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy current probe. One or more first signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. A gain and/or distortion of a phase included in the first signals is calibrated based on the second signals. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes: a polishing table; a sample carrier arranged to hold the sample over the polishing table; and an eddy current probe. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
Abstract:
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
Abstract:
Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe.