公开(公告)号：AU4679199A

公开(公告)日：2000-01-17

申请号：AU4679199

申请日：1999-06-10

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ,  ARMSTRONG J JOSEPH ,  BROWN DAVID L ,  LIN JASON Z ,  TSAI BIN-MING BENJAMIN

IPC: G01B11/30 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00

Abstract: Disclosed is a method and apparatus for using far field scattered and diffracted light to determine whether a collection of topological features on a surface (e.g., a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a "baseline"). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio.

公开(公告)号：DE69940315D1

公开(公告)日：2009-03-05

申请号：DE69940315

申请日：1999-06-10

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ,  ARMSTRONG JOSEPH J ,  BROWN DAVID L ,  LIN JASON Z ,  TSAI BIN-MING BENJAMIN

IPC: G01B11/30 ,  G01N21/00 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66

Abstract: Disclosed is a method and apparatus for using far field scattered and diffracted light to determine whether a collection of topological features on a surface (e.g., a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a "baseline"). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio.

公开(公告)号：WO2010148343A2

公开(公告)日：2010-12-23

申请号：PCT/US2010039238

申请日：2010-06-18

Applicant: KLA TENCOR CORP ,  CHEN HONG ,  LIN JASON Z

Inventor： CHEN HONG ,  LIN JASON Z

IPC: H01L21/027 ,  G01N21/956 ,  G03F1/08

CPC classification number: G01N21/956 ,  G01N2021/95676 ,  G03F1/84 ,  H01L22/12

Abstract: One embodiment relates to a method of automatically inspecting multiple array regions (102) simultaneously using an imaging apparatus (302). The method includes selecting (211 or 212) an optimal pixel size such that each array region in the multiple array regions has a grouped cell which is an integer number of pixels in size, and adjusting a pixel size of the imaging apparatus to be the selected optimal pixel size. Optimal pixel sizes within an available range of pixel sizes may be determined by finding (202) a largest common divider of cell sizes of the multiple array regions when the cell sizes are expressed in integers. Pre-set criteria may be applied to determine (208) which, if any, of the optimal pixel sizes are acceptable based on pre-set criteria. If none of the optimal pixel sizes are acceptable, then one of the array regions may be marked for digital interpolation (see 216). Other embodiments, aspects, and features are also disclosed.

Abstract translation: 一个实施例涉及一种使用成像设备（302）同时自动检查多个阵列区域（102）的方法。 该方法包括选择（211或212）最佳像素大小，使得多个阵列区域中的每个阵列区域具有分组的小区，其大小为整数像素，并且将成像设备的像素大小调整为所选择的 最佳像素大小。 可以通过在单元格大小以整数表示时，找到（202）多个阵列区域的单元大小的最大公共分频器来确定像素大小的可用范围内的最佳像素大小。 可以应用预设标准以基于预设标准来确定（208）哪些最佳像素大小是可接受的。 如果没有最佳像素尺寸是可以接受的，则可以将阵列区域之一标记为数字插值（参见216）。 还公开了其它实施例，方面和特征。

公开(公告)号：EP1092145A4

公开(公告)日：2002-10-02

申请号：EP99930207

申请日：1999-06-10

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ,  ARMSTRONG J JOSEPH ,  BROWN DAVID L ,  LIN JASON Z ,  TSAI BIN-MING BENJAMIN

IPC: G01B11/30 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  G01N21/95623 ,  G01N21/95692 ,  G03F7/7065

Abstract: Disclosed is a method and apparatus for using far field scattered and diffracted light (412) to determine whether a collection of topological features on a surface (408), (e.g. a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a 'baseline'). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface (408) features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light (412) sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio.

公开(公告)号：EP2289096A4

公开(公告)日：2017-08-02

申请号：EP09759037

申请日：2009-05-26

Applicant: KLA-TENCOR CORP

Inventor： CHEN HONG ,  VAN RIET MICHAEL J ,  CHEN CHIEN - HUEI (ADAM) ,  LIN JASON Z ,  MAHER CHRIS ,  KOWALSKI MICHAEL ,  BECKER BARRY ,  CHEN STEPHANIE ,  BALAKRISHNAN SUBRAMANIAN ,  TUMMALA SURYANARAYANA

IPC: H01L21/66

CPC classification number: G01N21/9501 ,  G01N21/956 ,  G01N2021/8822 ,  G01N2021/8854