公开(公告)号：WO2019032412A1

公开(公告)日：2019-02-14

申请号：PCT/US2018/045302

申请日：2018-08-06

Applicant: KLA-TENCOR CORPORATION

Inventor： WANG, Tianhan ,  ROSENBERG, Aaron ,  HU, Dawei ,  KUZNETSOV, Alexander ,  NGUYEN, Manh, D. ,  PANDEV, Stilian ,  LESOINE, John ,  ZHAO, Qiang ,  LEE, Lie-Quan Rich ,  CHOUAIB, Houssam ,  DI, Ming ,  KAACK, Torsten ,  SHCHEGROV, Andrei ,  TAN, Zhengquan

IPC: G01J3/02 ,  G01J3/28 ,  G01J3/12

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

公开(公告)号：WO2019113395A1

公开(公告)日：2019-06-13

申请号：PCT/US2018/064369

申请日：2018-12-07

Applicant: KLA-TENCOR CORPORATION

Inventor： NGUYEN, Manh ,  ATKINS, Phillip ,  KUZNETSOV, Alexander ,  LEE, Lie-Quan Rich ,  MALKOVA, Natalia ,  AOYAGI, Paul ,  SUSHCHIK, Mikhail ,  CHOUAIB, Houssam ,  HU, Dawei

IPC: H01L21/66

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.