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    SEMICONDUCTOR DEVICE MODELS INCLUDING RE-USABLE SUB-STRUCTURES
    4.
    发明申请
    SEMICONDUCTOR DEVICE MODELS INCLUDING RE-USABLE SUB-STRUCTURES 审中-公开
    半导体器件模型，包括可用的子结构

    公开(公告)号：WO2015109035A1

    公开(公告)日：2015-07-23

    申请号：PCT/US2015/011487

    申请日：2015-01-14

    Applicant: KLA-TENCOR CORPORATION

    Inventor： ILORETA, Jonathan ,  LAFFIN, Matthew A. ,  POSLAVSKY, Leonid ,  KAACK, Torsten ,  ZHAO, Qiang ,  LEE, Lie-Quan

    IPC: H01L21/66

    CPC classification number: H01L22/12

    Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.

    Abstract translation: 提出了基于可重复使用的参数模型生成复杂装置结构测量模型的方法和工具。 采用这些模型的计量系统配置为测量与不同半导体制造工艺相关的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。

    HIGH THROUGHPUT THIN FILM CHARACTERIZATION AND DEFECT DETECTION
    5.
    发明申请
    HIGH THROUGHPUT THIN FILM CHARACTERIZATION AND DEFECT DETECTION 审中-公开
    高电流薄膜特征和缺陷检测

    公开(公告)号：WO2013049001A2

    公开(公告)日：2013-04-04

    申请号：PCT/US2012/057019

    申请日：2012-09-25

    Applicant: KLA-TENCOR CORPORATION

    Inventor： GAO, Xiang ,  FLANNER, III, Philip D. ,  POSLAVSKY, Leonid ,  JIANG, Zhiming ,  YE, Jun-Jie (Julilen) ,  KAACK, Torsten ,  ZHAO, Qiang

    IPC: G01N21/49 ,  G06F19/00

    CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

    Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特征。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

    SPECTRAL MATCHING BASED CALIBRATION
    7.
    发明申请
    SPECTRAL MATCHING BASED CALIBRATION 审中-公开
    基于光谱匹配的校准

    公开(公告)号：WO2013078239A1

    公开(公告)日：2013-05-30

    申请号：PCT/US2012/066131

    申请日：2012-11-20

    Applicant: KLA-TENCOR CORPORATION

    Inventor： KWAK, Hidong ,  JIANG, Zhiming ,  DIXON, Ward RDell ,  JAMES, Kenneth Edward ,  POSLAVSKY, Leonid ,  KAACK, Torsten

    IPC: H01L21/66

    CPC classification number: G01N21/274 ,  G01N21/211 ,  G03F7/70608

    Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

    Abstract translation: 介绍了目标检测系统校准系统参数值的方法和系统。 基于光谱误差的校准（SEBC）通过最小化给定样品或一组样品的不同检查系统之间的光谱误差的差异来提高检测系统之间的一致性。 确定系统参数值，使得由目标检查系统与样本的测量相关联的光谱误差与由参考检查系统对相同样本的测量相关联的光谱误差之间的差异最小化。 在一些示例中，系统参数值在不修改样本参数的情况下进行校准。 样本参数值的小的不准确性对校准几乎没有影响，因为目标系统和参考系统都测量相同的样本或一组样本。 通过在一组样品上执行SEBC，所得到的校准对于广泛的被测样品是稳健的。

    MULTI-ANALYZER ANGLE SPECTROSCOPIC ELLIPSOMETRY
    8.
    发明申请
    MULTI-ANALYZER ANGLE SPECTROSCOPIC ELLIPSOMETRY 审中-公开
    多分析仪角度分光光度计

    公开(公告)号：WO2013006637A1

    公开(公告)日：2013-01-10

    申请号：PCT/US2012/045436

    申请日：2012-07-03

    Applicant: KLA-TENCOR CORPORATION ,  KWAK, Hindong ,  DIXON, Ward ,  POSLAVSKY, Leonid ,  KAACK, Torsten

    Inventor： KWAK, Hindong ,  DIXON, Ward ,  POSLAVSKY, Leonid ,  KAACK, Torsten

    IPC: G01N21/21 ,  G01J4/00

    CPC classification number: G01J4/00 ,  G01N21/211 ,  G01N2021/213

    Abstract: Ellipsometry systems and ellipsometry data collection methods with improved stabilities are disclosed. In accordance with the present disclosure, multiple predetermined, discrete analyzer angles are utilized to collect ellipsometry data for a single measurement, and data regression is performed based on the ellipsometry data collected at these predetermined, discrete analyzer angles. Utilizing multiple discrete analyzer angles for a single measurement improves the stability of the ellipsometry system.

    Abstract translation: 公开了具有改进的稳定性的椭偏仪系统和椭偏仪数据采集方法。 根据本公开，使用多个预定的离散分析器角度来收集用于单个测量的椭圆测量数据，并且基于在这些预定的离散分析器角度收集的椭偏仪数据执行数据回归。 使用多个离散分析仪角度进行单次测量可提高椭偏仪系统的稳定性。

    MEASUREMENT OF COMPOSITION FOR THIN FILMS
    9.
    发明申请
    MEASUREMENT OF COMPOSITION FOR THIN FILMS 审中-公开
    薄膜组成的测量

    公开(公告)号：WO2013003122A2

    公开(公告)日：2013-01-03

    申请号：PCT/US2012/043157

    申请日：2012-06-19

    Applicant: KLA-TENCOR CORPORATION ,  DI, Ming ,  KAACK, Torsten ,  ZHAO, Qiang ,  GAO, Xiang ,  POSLAVSKY, Leonid

    Inventor： DI, Ming ,  KAACK, Torsten ,  ZHAO, Qiang ,  GAO, Xiang ,  POSLAVSKY, Leonid

    CPC classification number: G01N21/211 ,  G01N21/8422 ,  G01N2021/213

    Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

    Abstract translation: 本发明包括为多个半导体晶片产生实验的三维设计（DOE），DOE的第一维度是薄膜的第一组分的相对量， 所述DOE的第二维度是所述薄膜的第二分量的相对量，所述DOE的第三维度是所述薄膜的厚度，获取每个晶片的光谱，通过提取 识别所获取的光谱中的每一个的复折射率的实数分量（n）和虚分量（k），识别该组光学色散数据的一个或多个系统特征; 以及利用所述一组光学色散数据的所识别的一个或多个系统特征来生成多分量Bruggeman有效介质近似（BEMA）模型。

    SPECTRAL MATCHING BASED CALIBRATION
    10.
    发明公开
    SPECTRAL MATCHING BASED CALIBRATION 有权
    基于光谱匹配的标定

    公开(公告)号：EP2783392A1

    公开(公告)日：2014-10-01

    申请号：EP12852321.4

    申请日：2012-11-20

    Applicant: Kla-Tencor Corporation

    Inventor： KWAK, Hidong ,  JIANG, Zhiming ,  DIXON, Ward RDell ,  JAMES, Kenneth Edward ,  POSLAVSKY, Leonid ,  KAACK, Torsten

    IPC: H01L21/66

    CPC classification number: G01N21/274 ,  G01N21/211 ,  G03F7/70608

    Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

    Abstract translation: 介绍了用于校准目标检查系统的系统参数值的方法和系统。 基于光谱误差的校准（SEBC）通过最小化不同检测系统之间对于给定样本或样本组的不同检测系统的差异来增加检测系统之间的一致性。 系统参数值被确定为使得与由目标检查系统对样本的测量相关联的光谱误差与由参考检查系统对相同样本的测量相关联的光谱误差之间的差异被最小化。 在一些示例中，系统参数值被校准而无需修改样本参数。 样本参数值的小误差对校准影响不大，因为目标系统和参考系统都测量同一个样本或一组样本。 通过在一组样本上进行SEBC，所得到的校准对大范围的待测样本是稳健的。

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