Abstract:
Methods and systems for performing spectroscopic measurements of asymmetric features of semiconductor structures are presented herein. In one aspect, measurements are performed at two or more azimuth angles to ensure sensitivity to an arbitrarily oriented asymmetric feature. Spectra associated with one or more off-diagonal Mueller matrix elements sensitive to asymmetry are integrated over wavelength to determine one or more spectral response metrics. In some embodiments, the integration is performed over one or more wavelength sub-regions selected to increase signal to noise ratio. Values of parameters characterizing an asymmetric feature are determined based on the spectral response metrics and critical dimension parameters measured by traditional spectral matching based techniques.
Abstract:
A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.
Abstract:
Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.
Abstract:
Machine learning techniques are used to predict values of fixed parameters when given reference values of critical parameters. For example, a neural network can be trained based on one or more critical parameters and a low-dimensional real-valued vector associated with a spectrum, such as a spectroscopic ellipsometry spectrum or a specular reflectance spectrum. Another neural network can map the low-dimensional real-valued vector. When using two neural networks, one neural network can be trained to map the spectra to the low-dimensional real-valued vector. Another neural network can be trained to predict the fixed parameter based on the critical parameters and the low-dimensional real-valued vector from the other neural network.
Abstract:
A metrology system, method, and computer program product that employ automatic transitioning between utilizing a library and utilizing regression for measurement processing are provided. In use, it is determined, by the metrology system, that a predetermined condition has been met. In response to determining that the predetermined condition has been met, the metrology system automatically transitions between utilizing a library and utilizing regression for measurement processing.
Abstract:
A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
Abstract:
A library expansion system, method, and computer program product for metrology are provided. In use, processing within a first multi-dimensional library is performed by a metrology system. During the processing within the first multi-dimensional library, a second multi-dimensional library is identified. The processing is then transitioned to the second multi-dimensional library. Further, processing within the second multi-dimensional library is performed by the metrology system.