公开(公告)号：WO2003104929A2

公开(公告)日：2003-12-18

申请号：PCT/US2003/017899

申请日：2003-06-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： SELIGSON, Joel, L. ,  GHINOVKER, Mark ,  IZIKSON, Pavel ,  SIMKIN, Boris ,  ROBINSON, John ,  ADEL, Michael, E. ,  TULIPMAN, David

IPC: G06F

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

Abstract translation: 公开了分析覆盖目标质量的方法和装置。 在一个实施例中，公开了一种从覆盖目标提取数据的方法。 首先，提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。 在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

公开(公告)号：WO2003104929A3

公开(公告)日：2003-12-18

申请号：PCT/US2003/017899

申请日：2003-06-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： SELIGSON, Joel, L. ,  GHINOVKER, Mark ,  IZIKSON, Pavel ,  SIMKIN, Boris ,  ROBINSON, John ,  ADEL, Michael, E. ,  TULIPMAN, David

IPC: G06K9/00

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

公开(公告)号：WO2009029851A2

公开(公告)日：2009-03-05

申请号：PCT/US2008/074872

申请日：2008-08-29

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  IZIKSON, Pavel

Inventor： IZIKSON, Pavel

IPC: H01L21/66

CPC classification number: G05B13/027 ,  G03F7/70625 ,  G03F7/70633 ,  H01L22/12

Abstract: Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values (114, 700, 800, 900). In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition (114).

Abstract translation: 提供了使用多个已知参数值来预测多个未知参数值（例如重叠误差或临界尺寸）的装置和方法。 在一个实施例中，该方法包括训练神经网络以预测多个参数值（114,700,800,900）。 在其他实施例中，预测过程不依赖于光刻工具的光学特性。 这种预测可以用于确定晶片批次布置（114）。

公开(公告)号：WO2007109103A2

公开(公告)日：2007-09-27

申请号：PCT/US2007/006569

申请日：2007-03-15

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ADEL, Michael, E. ,  ROBINSON, John ,  IZIKSON, Pavel ,  EICHELBERGER, Brad ,  WIDMANN, Amir ,  KATO, Atsuhiko

Inventor： ADEL, Michael, E. ,  ROBINSON, John ,  IZIKSON, Pavel ,  EICHELBERGER, Brad ,  WIDMANN, Amir ,  KATO, Atsuhiko

IPC: G01J1/00

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract translation: 用于优化曝光系统队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组独特的失真曲线。 一组有特色的失真简档存储在数据库中。 提供具有形成在其上的参考图案的晶片用于进一步的图案制造，并且从车队中选择曝光系统以在晶片上制造下一层。 使用不同的失真曲线来调整所选曝光系统的线性和高阶参数以对参考图案的失真进行建模。 一旦调整曝光系统，就用于在晶片上形成平版印刷图案。

公开(公告)号：EP1512112A2

公开(公告)日：2005-03-09

申请号：EP03736896.6

申请日：2003-06-05

Applicant: KLA-Tencor Technologies Corporation

Inventor： SELIGSON, Joel, L. ,  GHINOVKER, Mark ,  IZIKSON, Pavel ,  SIMKIN, Boris ,  ROBINSON, John ,  ADEL, Michael, E. ,  TULIPMAN, David

IPC: G06K9/00 ,  G01B5/28 ,  G06F17/50 ,  H01L21/76

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.