公开(公告)号：JPH08125215A

公开(公告)日：1996-05-17

申请号：JP29719594

申请日：1994-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： AKI YOSHIYASU ,  BOKU HEIUN

IPC: H01L31/10 ,  H01L29/88 ,  H01L31/00 ,  H01L31/0352 ,  H03B7/06

Abstract: PURPOSE: To achieve an optical controlled resonant tunneling oscillator that is simple and is capable of an ultrahigh-speed signal processing by controlling the frequency of the resonance transmission vibrator according to the intensity of light. CONSTITUTION: In an optically controlled resonant tunneling oscillator, a heavily doped GaAs buffer layer 1, first and second gap layers 2 and 3 and third and fourth gap layers 6 and 7 that play a role of a depletion layer are formed successively in a forward mesa structure. First and second barrier layers 4a and 4b between the second gap layer 3 and the third gap layer 6 are formed in a double barrier quantum- well structure on a semi-insulation GaAs substrate. Then, the vibrator is constituted of a well layer 5, that is formed at the interfaces and a window layer 8 formed at the upper part of the fourth gap layer 7 and is made of a substance with a large band gap, so that the large part of light that is applied to a surface can be absorbed by a depletion layer. Therefore, when light is applied to the surface of the resonant tunneling element, vibration characteristics change due to expressions I and II (Rs: series resistor, Rn: negative resistor of resonant tunneling diode, C: diode capacitance, and Ls: inductance of packaged circuit) and frequency characteristics can be controlled according to the intensity of light.

公开(公告)号：JPH07202247A

公开(公告)日：1995-08-04

申请号：JP28099794

申请日：1994-11-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： AKI YOSHIYASU ,  BOKU HEIUN ,  KAN SENKEI ,  SAI EIKAN ,  KIN KEIGIYOKU

IPC: H01L31/10 ,  H01L31/0352

Abstract: PURPOSE: To provide a device wherein, by utilizing the resonant tunneling effect, operation is controlled by light. CONSTITUTION: A quantum-well structure 40 has two or more barriers, a collector electrode 21 and an emitter electrode 22 for applying a bias to the quantum- well structure 40, and a gap layer 6 provided between the quantum-well structure 40 and the collector electrode 21 are provided. The gap layer 6 is made of a material which has a band gap smaller than that of the barrier of the quantum well 40. For the gap layer 6 to be irradiated with light, a window part 70 is provided.