公开(公告)号：JPH07294968A

公开(公告)日：1995-11-10

申请号：JP31295394

申请日：1994-12-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHIN SHIYUKUI ,  SAI EIKAN ,  KEN GOKIN ,  RI KAZUTSUNE

IPC: G02F1/35 ,  G02F3/02 ,  H01L29/15 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE: To enable application to a long wavelength optical switch element by optimizing material constitution and structure by investigating the light absorbing characteristics of InGaAsP/InP as four-component mixed material structure. CONSTITUTION: This method finds out optimized structure for maximizing the ratio of light absorption and output strength by operating the wavelength area of 1.55μm as an area for applying the minimum loss value of optical fibers, by adjusting the component ratio and structure of InGaAsP/InP mixed structure. In addition the maximized value of a maximum light absorption value caused by a heavy holeexciting element at the time of generating no electric field is provided by utilizing a parameter (γ) for finding out optimized structure of InP four-component mixed material. For example, the optimized structure for maximizing the light absorption effect of the exciting element by changing (x) and (y) molar fractions and well width of In1-x Gax Asy P1-y /InP material structure to be utilized for an optical bistable switch element is determined, by using the parameter ρ=[α((0)-α(F)]/α(F) (α is a light absorption coefficient and F is the size of electric field in this case).

公开(公告)号：JPH0772516A

公开(公告)日：1995-03-17

申请号：JP16439594

申请日：1994-07-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KAN SENKEI ,  RI SHIYOUTAI ,  YU HEISHIYUU ,  TEI YASUMICHI ,  SAI EIKAN ,  BOKU HEIUN ,  RI KAZUTSUNE

IPC: G02F1/015 ,  G02F1/01 ,  G02F1/35 ,  H01L27/14 ,  H01L31/00

Abstract: PURPOSE: To provide an ultra-high speed optical switching element which is operative at ordinary temp. and is capable of overcoming the threshold of switching of a several tens nanosecond band. CONSTITUTION: If incident light 4 passes a first multiple quantum well structure 1 changed in the properties of light by control light 3, transmitted light 5 is so changed as to have an increased light quantity by exposure development. When this light passes a second multiple quantum well structure 2, the exposure development by this second multiple quantum well structure 2 is increased by the exposure development by the changed light during the first several picoseconds and the quantity of the transmitted light 5 is eventually increased. Namely, the intensity of the transmitted light 5 increases in the short time band. On the other hand, the second MQWS acts as an absorber and the transmitted light quantity is increased during several picoseconds in the long time zone past the several picoseconds. The long time constant is offset by the second MWQS and an off-time is shortened.

公开(公告)号：JPH07209681A

公开(公告)日：1995-08-11

申请号：JP30108394

申请日：1994-12-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAI EIKAN ,  KEN GOKIN ,  RI KAZUTSUNE

IPC: G02F3/02 ,  H01L31/10 ,  H01L31/14

Abstract: PURPOSE: To improve bi-stability of light in SEED where the bi-stable characteristic of light is obtained with improvement without external voltage. CONSTITUTION: The thickness of an intrinsic area is reduced by appropriately reducing the frequency of a multiplex quantum well 31. Thus, SEED of an asymmetrical Fabry rot structure where resistance for considerably increasing the difference (ΔR) of a reflection factor between on/off states and the bi-stable width (ΔP) of light does not match while the appropriate on/off intensity ratio is maintained which is required from an optical system can be provided.

公开(公告)号：JPH08148701A

公开(公告)日：1996-06-07

申请号：JP31095894

申请日：1994-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KEN GOKIN ,  SAI EIKAN ,  RI KAZUTSUNE

IPC: H01L29/47 ,  G02F1/015 ,  G02F3/00 ,  G02F3/02 ,  H01L29/12 ,  H01L29/872 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/108

Abstract: PURPOSE: To carry out operations at high speed without thermal damages by placing the well structure of a multiple quantum having the characteristics of electro-optical absorption in an intermediate layer between a semiconductor layer and a Schottky metallic film and composing a diode of a metallic layer/a multiple quantum layer/the semiconductor layer. CONSTITUTION: Multiple quantum well structure is formed of the quantum barrier layer 6 of gallium arsenide and the quantum-well layer 7 of indium gallium arsenide in an intrinsic region. A buffer layer 8 of gallium arsenide which is not doped is formed onto the multiple quantum-well structure in a constant thickness (Lb1), and a metallic layer 9 is formed onto the buffer layer 8 for a Schottky electrode layer and a mirror layer. A metallic film layer is jointed directly to a Schottky-diode intermediate layer, a metallic layer also having superior thermal conductivity is stuck fast to the intermediate layer in the trouble of the performance deterioration of the element, due to a photocurrent organic partial temperature rise generated from large input light required for the operation of the optical element at high speed, and thermal damages are resolved, and element performance level is brought close to its limit, thus obtaining operation at high speed.

公开(公告)号：JPH07202247A

公开(公告)日：1995-08-04

申请号：JP28099794

申请日：1994-11-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： AKI YOSHIYASU ,  BOKU HEIUN ,  KAN SENKEI ,  SAI EIKAN ,  KIN KEIGIYOKU

IPC: H01L31/10 ,  H01L31/0352

Abstract: PURPOSE: To provide a device wherein, by utilizing the resonant tunneling effect, operation is controlled by light. CONSTITUTION: A quantum-well structure 40 has two or more barriers, a collector electrode 21 and an emitter electrode 22 for applying a bias to the quantum- well structure 40, and a gap layer 6 provided between the quantum-well structure 40 and the collector electrode 21 are provided. The gap layer 6 is made of a material which has a band gap smaller than that of the barrier of the quantum well 40. For the gap layer 6 to be irradiated with light, a window part 70 is provided.