公开(公告)号：JPH0772516A

公开(公告)日：1995-03-17

申请号：JP16439594

申请日：1994-07-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KAN SENKEI ,  RI SHIYOUTAI ,  YU HEISHIYUU ,  TEI YASUMICHI ,  SAI EIKAN ,  BOKU HEIUN ,  RI KAZUTSUNE

IPC: G02F1/015 ,  G02F1/01 ,  G02F1/35 ,  H01L27/14 ,  H01L31/00

Abstract: PURPOSE: To provide an ultra-high speed optical switching element which is operative at ordinary temp. and is capable of overcoming the threshold of switching of a several tens nanosecond band. CONSTITUTION: If incident light 4 passes a first multiple quantum well structure 1 changed in the properties of light by control light 3, transmitted light 5 is so changed as to have an increased light quantity by exposure development. When this light passes a second multiple quantum well structure 2, the exposure development by this second multiple quantum well structure 2 is increased by the exposure development by the changed light during the first several picoseconds and the quantity of the transmitted light 5 is eventually increased. Namely, the intensity of the transmitted light 5 increases in the short time band. On the other hand, the second MQWS acts as an absorber and the transmitted light quantity is increased during several picoseconds in the long time zone past the several picoseconds. The long time constant is offset by the second MWQS and an off-time is shortened.

公开(公告)号：JPH07202247A

公开(公告)日：1995-08-04

申请号：JP28099794

申请日：1994-11-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： AKI YOSHIYASU ,  BOKU HEIUN ,  KAN SENKEI ,  SAI EIKAN ,  KIN KEIGIYOKU

IPC: H01L31/10 ,  H01L31/0352

Abstract: PURPOSE: To provide a device wherein, by utilizing the resonant tunneling effect, operation is controlled by light. CONSTITUTION: A quantum-well structure 40 has two or more barriers, a collector electrode 21 and an emitter electrode 22 for applying a bias to the quantum- well structure 40, and a gap layer 6 provided between the quantum-well structure 40 and the collector electrode 21 are provided. The gap layer 6 is made of a material which has a band gap smaller than that of the barrier of the quantum well 40. For the gap layer 6 to be irradiated with light, a window part 70 is provided.