公开(公告)号：JPH08186128A

公开(公告)日：1996-07-16

申请号：JP31538694

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHINKI ,  SAI SOUSHIYU ,  IN KIYOUSHIYOU ,  BOKU CHIYURUJIYUN ,  YU KEISHIYUN ,  BOKU KIYOUMO

IPC: H01L21/027 ,  H01L21/336 ,  H01L21/338 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812

Abstract: PURPOSE: To reduce the resistance and parasitic capacitance of a fine gate by irradiating the upper and lower parts of the gate with an electron beam having different intensity of energy. CONSTITUTION: A two-dimensional electron gas layer 2, an AlGaAs layer 3 and a doped Schottky layer, i.e., a cap layer 4, are formed sequentially on a substrate 1 followed by formation of ohmic layers 5a, 5b. A resist 6 is then applied to the cap layer 4 and heat treated. Subsequently, a second resist 7 is applied onto the first resist 6 and an exposure step is executed using an electron beam having uneven energy. In order to form a T type gate, first and third electron beams 8a, 8c have energy of such intensity as exposing only the second resist 7 while a second electron beam 8b has energy of such intensity the first and second resists 6, 7 can be exposed entirely.