公开(公告)号：JPH08186128A

公开(公告)日：1996-07-16

申请号：JP31538694

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHINKI ,  SAI SOUSHIYU ,  IN KIYOUSHIYOU ,  BOKU CHIYURUJIYUN ,  YU KEISHIYUN ,  BOKU KIYOUMO

IPC: H01L21/027 ,  H01L21/336 ,  H01L21/338 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812

Abstract: PURPOSE: To reduce the resistance and parasitic capacitance of a fine gate by irradiating the upper and lower parts of the gate with an electron beam having different intensity of energy. CONSTITUTION: A two-dimensional electron gas layer 2, an AlGaAs layer 3 and a doped Schottky layer, i.e., a cap layer 4, are formed sequentially on a substrate 1 followed by formation of ohmic layers 5a, 5b. A resist 6 is then applied to the cap layer 4 and heat treated. Subsequently, a second resist 7 is applied onto the first resist 6 and an exposure step is executed using an electron beam having uneven energy. In order to form a T type gate, first and third electron beams 8a, 8c have energy of such intensity as exposing only the second resist 7 while a second electron beam 8b has energy of such intensity the first and second resists 6, 7 can be exposed entirely.

公开(公告)号：JPH06202009A

公开(公告)日：1994-07-22

申请号：JP28153093

申请日：1993-11-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU GIYONRIYUU ,  BOKU SHINSHIYOU ,  BOKU KIYOUMO

IPC: G02F3/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B26/08 ,  H02N1/00

Abstract: PURPOSE: To provide an optical open/close equipment where a micro-electrostatic actuator produced only by semiconductor process is utilized and its producing method. CONSTITUTION: Positive and negative voltages are applied to a selection electrode 3 and a signal electrode 2, to make a traveling element 12 electrified. When the impressed voltage polarity of the signal electrode 2 changes instantaneously, an electric charge electrified to be band-shaped at a traveling element side does not immediately react, owing to the resistance of the travelling element 12. Therefore, driving force for moving the travelling element 12 to a left side occurs together with the repulsion between the travelling element 12 and the electrode 2, so that a shutter travelling element 12 is moved.

公开(公告)号：JPH08186485A

公开(公告)日：1996-07-16

申请号：JP31539094

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN BINKEN ,  KIN CHIYUUKAN ,  KOU INGABU ,  RI MASASUZU ,  BOKU KIYOUMO

IPC: H01P1/15 ,  H03K17/687

Abstract: PURPOSE: To obtain a depletion-type MOSFET switch circuit operated with a positive voltage as to an ultrahigh frequency monolithic integrated circuit to which only a positive power supply voltage is applied. CONSTITUTION: The circuit is provided with a depletion-type 1st MOSFET 201 whose gate receives an input signal and whose drain provides an output of an output signal, a 2nd MOSFET 203 whose source connects to the source of the 1st MOSFET 201 and whose gate connects to an interruption adjustment power supply Vc, and a 3rd MOSFET 205 whose drain connects to the sources of the 1st and 2nd MOSFETs 201, 203, whose source and gate connect respectively to ground and acting like a constant current source.

公开(公告)号：JPH07201889A

公开(公告)日：1995-08-04

申请号：JP30654394

申请日：1994-12-09

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOU TENKIYOKU ,  GO OUKI ,  IN KIYOUSHIYOU ,  RI SHINKI ,  BOKU TETSUJIYUN ,  BOKU KIYOUMO

IPC: H01L29/43 ,  H01L21/30 ,  H01L21/338 ,  H01L29/423 ,  H01L29/49 ,  H01L29/812

Abstract: PURPOSE: To simplify the forming process of a fine pattern and a T-shape gate by doubly exposing a photoresist film through the use of an optical stepper, making it the photoresist film of a lower layer, forming the photoresist film of an upper layer on it and applying a metallic film on it. CONSTITUTION: A photoresist film 20 is applied on the semi-insulating GaAs substrate 10. A photomask 30 having an opaque region 31 is arranged on it and the region of a gate is exposed by the exposure of ultraviolet rays. When the region is exposed again in a state in which the photomask is moved for a prescribed distance, the regions which are not exposed are again classified as a region 22 which is not exposed and regions 23 which have been exposed once, and the region except for the regions is the region that has been exposed twice. Thus, a pattern which is finer than the resolution of the applied stepper can be formed in the formation of the fire form, and the form of the T-shape gate can efficiently be formed.

公开(公告)号：JPH05210577A

公开(公告)日：1993-08-20

申请号：JP23865192

申请日：1992-09-07

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KIOU ,  RI MASASUZU ,  BOKU KIYOUMO ,  IN KIYOUCHIN ,  BOKU SHINSHIYU

IPC: G06F12/06 ,  G11C8/12

Abstract: PURPOSE: To provide a semiconductor device in which AN additional outside chip selection controlling circuit is not necessary in order to improve a chip selection terminal and to constitute a simple decoding circuit inside the semiconductor device. CONSTITUTION: A decoding logic circuit 40 equipped with plural chip selection terminal pairs or the like for selecting a single semiconductor element chip corresponding to the logical combination of an extended address is constituted inside the semiconductor element chip or the like. The decoding logic circuit 40 includes inside logic circuits 30 or the like in the same number as that of the selected semiconductor element chips or the like. Also, the decoding logic circuit 40 includes a module selection terminal (cs) for selecting the overall modules. The inside logic circuit 30 includes a first logic designating circuit 10a which maintains a prescribed logical state and a second logical state circuit 10b which maintains the logical state opposite to that of the first logic designating circuit 10a.

公开(公告)号：JPH0778900A

公开(公告)日：1995-03-20

申请号：JP15989494

申请日：1994-07-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN TOUKIYUU ,  SOU MINKEI ,  BOKU SEISHIYU ,  KIYOU SHIYOUKIYUU ,  IN KIYOUCHIN ,  BOKU KIYOUMO

IPC: H01L21/52 ,  H01L23/02 ,  H01L23/04 ,  H01L23/28 ,  H01L23/433 ,  H01L23/48 ,  H01L23/495 ,  H01L23/60 ,  H01L23/66

Abstract: PURPOSE: To provide a package structure for improving the high-frequency characteristics of an element, at the same time standardizing the assembly process for mass-production, and reducing the assembly cost of the element, and an element assembly method. CONSTITUTION: An assembly method includes a process for adhering a heat sink 7 to a lead frame 1, a process for eliminating a thermal stress that is generated from a power element chip 9 and the difference in a thermal coefficient of expansion, a process for manufacturing a lead for impedance matching to improve high-frequency characteristics and for shielding noises, and a process for performing plastic molding utilizing epoxy.

公开(公告)号：JPH05188401A

公开(公告)日：1993-07-30

申请号：JP16459592

申请日：1992-06-23

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN TOUKIYUU ,  BOKU GIYONRIYUU ,  BOKU SHINSHIYU ,  BOKU TETSUJIYUN ,  BOKU KIYOUMO

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE: To prevent the degradation in a yield with an increase in size, to lessen the resistance of gate bus lines and to minimize the shorting between wirings from gate insulating films or the intersected parts of the wirings. CONSTITUTION: This process for production includes a stage for producing unit thin-film transistor(TFT) panels on a polyimide supporting base 33 and a stage for aligning and fixing the unit TFT panels in matrix on a glass substrate 17, then electrically connecting and joining the drain bus lines and gate bus lines of the ends of the unit TFT panels to be joined to each other by an ink jet method. The unit TFT panels are constituted by forming gate metals of three layers Cr/Cu/Cr, forming the respective gate bus lines and drain bus lines on the upper and lower surfaces of the polyimide thin films and connecting drain pads and the drain bus lines by a via hole stage.