PREPARATION OF GALLIUM ARSENIC SUBSTRATE WITH HIGH DENSE V TYPE GROOVE

    公开(公告)号:JPH07321100A

    公开(公告)日:1995-12-08

    申请号:JP28383394

    申请日:1994-11-17

    Abstract: PURPOSE: To manufacture a gallium arsenide substrate having high density V-shaped trenches, by etching the parts where Si3 N4 is not formed in the gallium arsenide substrate by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed, and selectively growing a gallium arsenide thin film. CONSTITUTION: An Si3 N4 film having a specified pattern corresponding to the minimum line width is formed on a gallium arsenide substrate 10. The parts where Si3 N4 is not formed in the gallium arsenide substrate 10 are etched by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed. A gallium arsenide thin film is selectively grown on the substrate etched by sulfuric acid based etching solution. After that, the Si3 N4 film is eliminated.

    SURFACE ADSORPTION APPARATUS OF HYDROGEN ATOMS UTILIZING MAXIMIZED-EFFICIENCY NOZZLE

    公开(公告)号:JPH08148432A

    公开(公告)日:1996-06-07

    申请号:JP30654494

    申请日:1994-12-09

    Abstract: PURPOSE: To provide a hydrogen atomic surface-adsorbing device using a nozzle, having a maximum efficiency which makes hydrogen molecules collide with the heated nozzle in a superhigh vacuum to separate them into hydrogen atoms and makes a semiconductor or metal adsorb the atoms on the surface thereof with high efficiency. CONSTITUTION: An electron beam acceleration system is changed into a direct electrical resistance system to simplify a structure, and a shape of a nozzle 120 for passing hydrogen molecules to separate them into hydrogen atoms is improved from a simple cylindrical shape to a zigzag shape for maximizing a collision rate, and a tantalum cover 300 is provided in front of the nozzle 120 to prevent the surface of a specimen from being heating by the heat radiated by the heated nozzle 120.

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