PREPARATION OF GALLIUM ARSENIC SUBSTRATE WITH HIGH DENSE V TYPE GROOVE

    公开(公告)号:JPH07321100A

    公开(公告)日:1995-12-08

    申请号:JP28383394

    申请日:1994-11-17

    Abstract: PURPOSE: To manufacture a gallium arsenide substrate having high density V-shaped trenches, by etching the parts where Si3 N4 is not formed in the gallium arsenide substrate by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed, and selectively growing a gallium arsenide thin film. CONSTITUTION: An Si3 N4 film having a specified pattern corresponding to the minimum line width is formed on a gallium arsenide substrate 10. The parts where Si3 N4 is not formed in the gallium arsenide substrate 10 are etched by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed. A gallium arsenide thin film is selectively grown on the substrate etched by sulfuric acid based etching solution. After that, the Si3 N4 film is eliminated.

    SUPER-HIGH-SPEED OPTICAL SWITCHING ELEMENT HAVING DOUBLE-JUNCTION MQW STRUCTURE

    公开(公告)号:JPH0772516A

    公开(公告)日:1995-03-17

    申请号:JP16439594

    申请日:1994-07-15

    Abstract: PURPOSE: To provide an ultra-high speed optical switching element which is operative at ordinary temp. and is capable of overcoming the threshold of switching of a several tens nanosecond band. CONSTITUTION: If incident light 4 passes a first multiple quantum well structure 1 changed in the properties of light by control light 3, transmitted light 5 is so changed as to have an increased light quantity by exposure development. When this light passes a second multiple quantum well structure 2, the exposure development by this second multiple quantum well structure 2 is increased by the exposure development by the changed light during the first several picoseconds and the quantity of the transmitted light 5 is eventually increased. Namely, the intensity of the transmitted light 5 increases in the short time band. On the other hand, the second MQWS acts as an absorber and the transmitted light quantity is increased during several picoseconds in the long time zone past the several picoseconds. The long time constant is offset by the second MWQS and an off-time is shortened.

    WAVELENGTH-DIVIDING INVERSE MULTIPLEXED ELEMENT AND SYSTEM USING WAVELENGTH-DIVIDING INVERSE MULTIPLEXED ELEMENT

    公开(公告)号:JPH08166607A

    公开(公告)日:1996-06-25

    申请号:JP30931294

    申请日:1994-12-13

    Abstract: PURPOSE: To provide a wavelength-division reverse multiplexing element expectable as giving high polarization rotating efficiency under the reduction of an energy loss, and capable of narrowing the peak line width of a reflected beam. CONSTITUTION: This reverse multiplexing element is structured to include the first mirror layer 20 used as a lower mirror layer formed on a substrate, with a medium having a small refraction factor and a medium having a large refraction factor alternately stacked, the second mirror layer 40 used as an upper mirror layer, with a medium having a large refraction factor and a medium having a small refraction factor alternately stacked, and an intermediate layer 30 made of a Kerr medium formed between the first mirror layer 20 and the second mirror layer 40. Also, the first mirror layer 20 is formed to have a relatively large refraction factor for the second mirror layer 40.

    OPTIMIZATION OF INP-BASED MULTIPLE QUANTUM WELL STRUCTURE FOR REALIZATION OF OPTICAL SWITCH FOR LONG WAVELENGTH

    公开(公告)号:JPH07294968A

    公开(公告)日:1995-11-10

    申请号:JP31295394

    申请日:1994-12-16

    Abstract: PURPOSE: To enable application to a long wavelength optical switch element by optimizing material constitution and structure by investigating the light absorbing characteristics of InGaAsP/InP as four-component mixed material structure. CONSTITUTION: This method finds out optimized structure for maximizing the ratio of light absorption and output strength by operating the wavelength area of 1.55μm as an area for applying the minimum loss value of optical fibers, by adjusting the component ratio and structure of InGaAsP/InP mixed structure. In addition the maximized value of a maximum light absorption value caused by a heavy holeexciting element at the time of generating no electric field is provided by utilizing a parameter (γ) for finding out optimized structure of InP four-component mixed material. For example, the optimized structure for maximizing the light absorption effect of the exciting element by changing (x) and (y) molar fractions and well width of In1-x Gax Asy P1-y /InP material structure to be utilized for an optical bistable switch element is determined, by using the parameter ρ=[α((0)-α(F)]/α(F) (α is a light absorption coefficient and F is the size of electric field in this case).

    METAL/SEMICONDUCTOR-BONDED SCHOTTKY-DIODE OPTICAL ELEMENT UTILIZING DISTORTION GROWTH LAYER

    公开(公告)号:JPH08148701A

    公开(公告)日:1996-06-07

    申请号:JP31095894

    申请日:1994-12-14

    Abstract: PURPOSE: To carry out operations at high speed without thermal damages by placing the well structure of a multiple quantum having the characteristics of electro-optical absorption in an intermediate layer between a semiconductor layer and a Schottky metallic film and composing a diode of a metallic layer/a multiple quantum layer/the semiconductor layer. CONSTITUTION: Multiple quantum well structure is formed of the quantum barrier layer 6 of gallium arsenide and the quantum-well layer 7 of indium gallium arsenide in an intrinsic region. A buffer layer 8 of gallium arsenide which is not doped is formed onto the multiple quantum-well structure in a constant thickness (Lb1), and a metallic layer 9 is formed onto the buffer layer 8 for a Schottky electrode layer and a mirror layer. A metallic film layer is jointed directly to a Schottky-diode intermediate layer, a metallic layer also having superior thermal conductivity is stuck fast to the intermediate layer in the trouble of the performance deterioration of the element, due to a photocurrent organic partial temperature rise generated from large input light required for the operation of the optical element at high speed, and thermal damages are resolved, and element performance level is brought close to its limit, thus obtaining operation at high speed.

    SURFACE ADSORPTION APPARATUS OF HYDROGEN ATOMS UTILIZING MAXIMIZED-EFFICIENCY NOZZLE

    公开(公告)号:JPH08148432A

    公开(公告)日:1996-06-07

    申请号:JP30654494

    申请日:1994-12-09

    Abstract: PURPOSE: To provide a hydrogen atomic surface-adsorbing device using a nozzle, having a maximum efficiency which makes hydrogen molecules collide with the heated nozzle in a superhigh vacuum to separate them into hydrogen atoms and makes a semiconductor or metal adsorb the atoms on the surface thereof with high efficiency. CONSTITUTION: An electron beam acceleration system is changed into a direct electrical resistance system to simplify a structure, and a shape of a nozzle 120 for passing hydrogen molecules to separate them into hydrogen atoms is improved from a simple cylindrical shape to a zigzag shape for maximizing a collision rate, and a tantalum cover 300 is provided in front of the nozzle 120 to prevent the surface of a specimen from being heating by the heat radiated by the heated nozzle 120.

    LOOP MIRROR-TYPE PERFECT OPTICAL SWITCH DEVICE OF NONLINEAR OPTICAL FIBER

    公开(公告)号:JPH07287262A

    公开(公告)日:1995-10-31

    申请号:JP31730594

    申请日:1994-12-20

    Abstract: PURPOSE: To eliminate the speed limitation of switching, due to the work-off effects of control light and signal light by additionally introducing the another control light, having suitable time delay for the existent control light. CONSTITUTION: This device is provided with a beam splitter 6 for splitting the control light provided from a control light source 3 into two control beams Ic1 and Ic2 in the ratio of 50:50, delayer 7 and mirror 8 for making one of two control beams incident to a 2nd wavelength divided optical fiber coupler 5, after delaying it for prescribed time in order to keep the difference between the transmission time of one of two control beams and the transmission time of the other signal beam. Thus, the other control beam Ic2 having the same intensity as one control beam, while keeping a suitable delay time for the control beam Ic1 to be used, is added from the conventional non-linear loop mirror structure, and a switching window having the same width as that time delay period is opened. Namely, the size of the switching window is unrelated to the work-off between control light and signal light.

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