公开(公告)号：JPH07321100A

公开(公告)日：1995-12-08

申请号：JP28383394

申请日：1994-11-17

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SEIFUKU ,  BOKU SEICHIYUU ,  RO SHIYOURAI ,  RI KAZUTSUNE

IPC: H01L29/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308

Abstract: PURPOSE: To manufacture a gallium arsenide substrate having high density V-shaped trenches, by etching the parts where Si3 N4 is not formed in the gallium arsenide substrate by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed, and selectively growing a gallium arsenide thin film. CONSTITUTION: An Si3 N4 film having a specified pattern corresponding to the minimum line width is formed on a gallium arsenide substrate 10. The parts where Si3 N4 is not formed in the gallium arsenide substrate 10 are etched by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed. A gallium arsenide thin film is selectively grown on the substrate etched by sulfuric acid based etching solution. After that, the Si3 N4 film is eliminated.