公开(公告)号：JPH09180995A

公开(公告)日：1997-07-11

申请号：JP30208196

申请日：1996-11-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SANSUU CHIYOI ,  YONJIN JIEON ,  HAIBIN CHIYUN ,  JIYONHIYUN RII ,  HIYUNJIYON YUU

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/30 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To obtain a product which satisfies all the required conditions of a mask by simultaneously using substance having no damage due to X-ray exposure at the site of an alignment window disposed with the mark and the site to become the X-ray exposure. SOLUTION: A first Si3 N4 thin film 42/poly-Si thin film 43/second Si3 N4 film 44 deposited on a silicon wafer are formed at a chip site 6. The site of an alignment window 5 is etched to the film 43, and formed only of the second film 44. At this time, the Si3 N4 thin film used for the window 5 has about 633nm of light permeability and about 80 or more. The window 5 is formed small to the minimum limit so that the supporting force of the permeable film is strong even if it is thin. Thus, the product which satisfies all the required conditions of the mask is obtained.

公开(公告)号：JPH09116015A

公开(公告)日：1997-05-02

申请号：JP22854996

申请日：1996-08-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONTE BAEKU ,  YONTE KIMU ,  HIYUNJIYON YUU

IPC: H01L21/28 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a contact hole filling method by which very small contact holes or via holes having a high step ratio can be filled with a wire metal, without forming any gap therein. SOLUTION: Contact holes 17 are formed into a substrate 11, a barrier metal layer 19 and moisture layer 21 are formed on the top of an oxide film 15 and inside of the holes 17 to electrically connect to the substrate 11, and a conductive metal layer 23 is formed on the layer 21 and etched with a plasma to remove impurities and oxides which exist on the surface of this layer 23 and would degrade the mobility of the surface metal atoms. In a reactor etched for cleaning, the metal layer 23 is reflowed to fill up the contact holes.

公开(公告)号：JPH09161640A

公开(公告)日：1997-06-20

申请号：JP16340196

申请日：1996-06-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BUUIYAN CHIYOI ,  KIYUNHO PAAKU ,  JIYONHIYUN RII ,  HIYUNJIYON YUU

IPC: H01H61/00 ,  B81B3/00 ,  H01H1/00 ,  H01H29/00 ,  H01H29/28 ,  H01H61/01 ,  H01H61/02 ,  H01L43/00

Abstract: PROBLEM TO BE SOLVED: To provide an extremely small micro-relay capable of being integrated and having low contact resistance by changing the internal pressure of a storage chamber via a temperature difference, moving a conductive liquid metal in a channel, and closing or opening signal electrodes. SOLUTION: Power is applied to the heater 12 of an active storage chamber 10 or the heater 42 of a passive storage chamber 40, the internal pressure of the storage chamber is changed by temperature, a liquid metal 50 is moved in a channel 20, and signal electrodes 34, 35 or 31, 32 are closed or opened. When power is selectively applied to the heater 12 or 42, the signal can be turned on or off. This latching heat-driven micro-relay element can be integrated in a silicon wafer bulk by the technique such as macro-burnishing, electroplating, and conductor process, and an extremely small micro-relay capable of being integrated and having small contact resistance can be obtained.