公开(公告)号：JPH09116015A

公开(公告)日：1997-05-02

申请号：JP22854996

申请日：1996-08-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONTE BAEKU ,  YONTE KIMU ,  HIYUNJIYON YUU

IPC: H01L21/28 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a contact hole filling method by which very small contact holes or via holes having a high step ratio can be filled with a wire metal, without forming any gap therein. SOLUTION: Contact holes 17 are formed into a substrate 11, a barrier metal layer 19 and moisture layer 21 are formed on the top of an oxide film 15 and inside of the holes 17 to electrically connect to the substrate 11, and a conductive metal layer 23 is formed on the layer 21 and etched with a plasma to remove impurities and oxides which exist on the surface of this layer 23 and would degrade the mobility of the surface metal atoms. In a reactor etched for cleaning, the metal layer 23 is reflowed to fill up the contact holes.

公开(公告)号：JPH09181073A

公开(公告)日：1997-07-11

申请号：JP25170696

申请日：1996-09-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BIYOUNGON YU ,  UONITSUKU JIYAN ,  SEUNYORU KAN ,  KUWANHO KIMU ,  JIYONTE BAEKU

IPC: H01L21/316 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To obtain a low-permittivity thin film excellent in gap falling capability by injecting SF6 gas as fluorine material gas, and further injecting SiH4 gas and TEOS(OC2 H5 )4 as silicon oxide material gas to form a SiH4 thin film. SOLUTION: A semiconductor substrate 10 is mounted on the semiconductor susceptor 11 in the reaction furnace of a remote plasma enhanced chemical vapor deposition (RPCVD) system. Then the semiconductor substrate is heated. With the semiconductor substrate in this state, SF6 +O2 mixed gas is injected as fluorine material gas for the formation of a low-permittivity SiOF thin film. In addition, SF6 +O2 gas is injected, and SiH4 gas and TEOS(OC2 H5 )4 are injected as silicon oxide material. At this time the material gas of TEOS is supplied by introducing carrier gas into a bubbler 8, and injecting it into the reaction furnace.