公开(公告)号：JPH09116015A

公开(公告)日：1997-05-02

申请号：JP22854996

申请日：1996-08-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONTE BAEKU ,  YONTE KIMU ,  HIYUNJIYON YUU

IPC: H01L21/28 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a contact hole filling method by which very small contact holes or via holes having a high step ratio can be filled with a wire metal, without forming any gap therein. SOLUTION: Contact holes 17 are formed into a substrate 11, a barrier metal layer 19 and moisture layer 21 are formed on the top of an oxide film 15 and inside of the holes 17 to electrically connect to the substrate 11, and a conductive metal layer 23 is formed on the layer 21 and etched with a plasma to remove impurities and oxides which exist on the surface of this layer 23 and would degrade the mobility of the surface metal atoms. In a reactor etched for cleaning, the metal layer 23 is reflowed to fill up the contact holes.