公开(公告)号：JPH10321534A

公开(公告)日：1998-12-04

申请号：JP3812598

申请日：1998-02-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  HYAKU SOKYO ,  RI SHINKO

IPC: H01L21/205 ,  H01L21/20

Abstract: PROBLEM TO BE SOLVED: To form a high-quality supper lattice structure by forming an epitaxial InP layer on a lattice-matched InAlAs thin film after the thin film is formed on an InP substrate and forming a multilayered layer by repeatedly forming the multilayered structure of the InP substrate, InAlAs thin film, and epitaxial InP layer. SOLUTION: A lattice-matched InAlAs thin film 2 is grown on an InP substrate 1a having a (100) lattice plane by the MOCVD method. After the buffer film 2 is grown on the InP substrate 1a in such a way, an epitaxial InP layer 1b is formed on the film 2. When the InP layer 1b is again grown on the InAlAs thin film 2 after the thin film 2 is grown on the InP substrate 1a, a quantum line having a cross section of 10×10 nm or smaller is grown. When such an InP/InAlAs/InP multilayered thin film structure is repeatedly grown, a supper lattice can be manufactured in both the vertical and horizontal directions.

公开(公告)号：JPH10321950A

公开(公告)日：1998-12-04

申请号：JP3671198

申请日：1998-02-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  HYAKU SOKYO

IPC: H01S5/00 ,  H01S3/02 ,  H01S5/183 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To make it possible to adjust the laser wavelength of each element to any value and stabilize the laser generating characteristic over aging, by forming a first electron constraint layer in an upper part of a first superlattice mirror layer formed on a substrate, then growing a quantum well constraint layer, a second electron constraint layer, and a second superlattice mirrorlayer in this order, and then heat-treating the entire body at high temperatures. SOLUTION: The cross-sectional structure of a tunable laser is constituted of an n-InP substrate 10, an n-lower superlattice mirror layer 20 formed on the substrate 10, an active layer 30, and a p-upper superlattice mirror layer 40. The lower and the upper superlattice mirror layers 20, 40 have such a structure that InAlAs layers 21a-21e and InGaAlAs layers 22a-22f are alternately deposited, and the active layer 30 has a multiple quantum well layer 32 sandwiched between a first electron constraint layer 31a and a second electron constrain layer 31b. With this structure heat-treated at high temperatures, an InAlAs clad layer in the active layer 30 has an unordered lattice structure with a varying band gap and reflective index.