公开(公告)号：JPH10321534A

公开(公告)日：1998-12-04

申请号：JP3812598

申请日：1998-02-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  HYAKU SOKYO ,  RI SHINKO

IPC: H01L21/205 ,  H01L21/20

Abstract: PROBLEM TO BE SOLVED: To form a high-quality supper lattice structure by forming an epitaxial InP layer on a lattice-matched InAlAs thin film after the thin film is formed on an InP substrate and forming a multilayered layer by repeatedly forming the multilayered structure of the InP substrate, InAlAs thin film, and epitaxial InP layer. SOLUTION: A lattice-matched InAlAs thin film 2 is grown on an InP substrate 1a having a (100) lattice plane by the MOCVD method. After the buffer film 2 is grown on the InP substrate 1a in such a way, an epitaxial InP layer 1b is formed on the film 2. When the InP layer 1b is again grown on the InAlAs thin film 2 after the thin film 2 is grown on the InP substrate 1a, a quantum line having a cross section of 10×10 nm or smaller is grown. When such an InP/InAlAs/InP multilayered thin film structure is repeatedly grown, a supper lattice can be manufactured in both the vertical and horizontal directions.