公开(公告)号：JPH07201734A

公开(公告)日：1995-08-04

申请号：JP28490994

申请日：1994-11-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOUSHIYOU ,  IN ZENJIN ,  KIN HOYUU ,  KIYOU SOUGEN

IPC: B82Y10/00 ,  B82Y40/00 ,  H01L21/20 ,  H01L21/203

Abstract: PURPOSE: To provide a stainless, no-potential heterojunction thin film by remov ing an oxide film and a different kind of thin film from a V-groove part by using a selective dry etching method and then removing the remaining film of oxide. CONSTITUTION: On the surface of a single-crystal thin film 1, a pattern is formed which includes lines repeated at specific intervals. Then etching is carried out to form grooves (V-grooves), which are repeated at intervals corresponding to the line pattern and is sectioned into a V-shape on the surface of the single- crystal thin film 1. On this surface, a different kind of thin film 2 in a V-groove pattern, having a grating mismatched with the thin film 1 is grown. The majority or the whole of grating mismatching potential is locally distributed because of the presence of the V-grooves. On the different kind of thin film 2, an oxide film 3 is vapor-deposited. Then the oxide film 3 and the different kind of thin film 2 at the V-groove part where the potentials are locally distributed are removed, and furthermore the oxide film 3 is removed.