公开(公告)号：JPH11261066A

公开(公告)日：1999-09-24

申请号：JP34059598

申请日：1998-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI DAIU ,  RO TAIBUN ,  KU JIN-KUN ,  KIM JONG-DAE ,  KIN SOKI ,  NAM KI-SU

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To drop yield voltage and ON-resistance, by extending a gate electrode in a lateral direction to a part of the upper side of a field insulating film from a gate area along the upper side of the center of a drift area, and extending a source electrode to a part of the field insulating film of the upper side of the drift area from a source area. SOLUTION: The gate electrode 7 of an electric element has a gate field board structure extended to a part of a field insulating film 3 through the center of the upper side of an n-type drift area 4 from a gate area in a lateral direction. A source electrode 11 has a field board structure extended to a part of the interlayer insulating film 10 of the upper side of the n-type drift area 4 from a source area. Thus, a depletion layer in the drift area 4 at the time of an operation changes by drain voltage and gate voltage. Yield voltage is boosted by RESURF(reduced surface field) effect in the drift area given by a source field board. Then, ON-resistance is reduced by the reduction of the depletion layer by the gate field board.

公开(公告)号：EP2080230A4

公开(公告)日：2016-03-30

申请号：EP07833763

申请日：2007-10-31

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： OH SOO-YOUNG ,  KANG MANGU ,  CHOI MIN-SHEO ,  KIM JONG-DAE

IPC: H01L31/04 ,  H01L31/042

CPC classification number: H01L31/042 ,  E06B9/303 ,  E06B9/386 ,  E06B2009/2476 ,  H01L31/0504 ,  H02S30/20 ,  Y02E10/50