公开(公告)号：JPH08186485A

公开(公告)日：1996-07-16

申请号：JP31539094

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN BINKEN ,  KIN CHIYUUKAN ,  KOU INGABU ,  RI MASASUZU ,  BOKU KIYOUMO

IPC: H01P1/15 ,  H03K17/687

Abstract: PURPOSE: To obtain a depletion-type MOSFET switch circuit operated with a positive voltage as to an ultrahigh frequency monolithic integrated circuit to which only a positive power supply voltage is applied. CONSTITUTION: The circuit is provided with a depletion-type 1st MOSFET 201 whose gate receives an input signal and whose drain provides an output of an output signal, a 2nd MOSFET 203 whose source connects to the source of the 1st MOSFET 201 and whose gate connects to an interruption adjustment power supply Vc, and a 3rd MOSFET 205 whose drain connects to the sources of the 1st and 2nd MOSFETs 201, 203, whose source and gate connect respectively to ground and acting like a constant current source.

公开(公告)号：JPH08186454A

公开(公告)日：1996-07-16

申请号：JP31719694

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KOU INGABU ,  KIN BINKEN ,  KIN CHIYUUKAN ,  RI MASASUZU ,  BOKU KIYOUBO

IPC: H03F3/60 ,  H01P5/02 ,  H03F3/193

Abstract: PURPOSE: To obtain excellent stability over all frequency bands by overcoming deteriorated stability due to an inductive component of a bonding wire connected externally. CONSTITUTION: In the case that grounding points are unified into one node and connected externally by using a bonding wire 120 in the low noise amplifier having an input matching section consisting of capacitors 101, 102 and an inductor 103 and an output matching section consisting of two MESFETs 104, 113 connected in cascade and a capacitor 117, a capacitor 110 is connected in parallel between the MESFETs 104, 113 to improve the deteriorated stability.