Device and method for separation/conversion of multiband signal

    公开(公告)号:GB2467449A

    公开(公告)日:2010-08-04

    申请号:GB201002477

    申请日:2008-05-23

    Abstract: Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.

    Device and method for separation/conversion of multiband signal

    公开(公告)号:GB2467449B

    公开(公告)日:2012-09-26

    申请号:GB201002477

    申请日:2008-05-23

    Abstract: Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.

    Avalanche photodiode and method of manufacturing the same
    3.
    发明公开
    Avalanche photodiode and method of manufacturing the same 审中-公开
    AVALANCHE光电及其制造方法

    公开(公告)号:KR20120065621A

    公开(公告)日:2012-06-21

    申请号:KR20100126842

    申请日:2010-12-13

    CPC classification number: H01L31/107 H01L31/0392 H01L31/047 H01L31/18

    Abstract: PURPOSE: An avalanche photodiode and a manufacturing method thereof are provided to efficiently reduce a size of the avalanche photodiode by minimizing an area for forming an N type electrode on the rear of an epitaxial wafer. CONSTITUTION: An epitaxial wafer including an absorbing layer(201), a grading layer(202), and an amplifying layer(204) is formed on a substrate(200). An insulation layer(205) is formed on the epitaxial wafer. One or more holes are formed from the insulation layer to the preset depth of the substrate. A tapered hole is formed by etching the upper side of the hole. An insulation layer(208) is formed on the walls of the hole and the tapered hole. A metal seed layer(209) is formed on the insulation layer.

    Abstract translation: 目的:提供雪崩光电二极管及其制造方法,以通过最小化在外延晶片的后部形成N型电极的面积来有效地降低雪崩光电二极管的尺寸。 构成:在基板(200)上形成包括吸收层(201),分级层(202)和放大层(204)的外延晶片。 在外延晶片上形成绝缘层(205)。 从绝缘层到基板的预设深度形成一个或多个孔。 通过蚀刻孔的上侧形成锥形孔。 在孔的壁和锥形孔上形成绝缘层(208)。 在绝缘层上形成金属种子层(209)。

Patent Agency Ranking