Abstract:
Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.
Abstract:
Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.
Abstract:
PURPOSE: An avalanche photodiode and a manufacturing method thereof are provided to efficiently reduce a size of the avalanche photodiode by minimizing an area for forming an N type electrode on the rear of an epitaxial wafer. CONSTITUTION: An epitaxial wafer including an absorbing layer(201), a grading layer(202), and an amplifying layer(204) is formed on a substrate(200). An insulation layer(205) is formed on the epitaxial wafer. One or more holes are formed from the insulation layer to the preset depth of the substrate. A tapered hole is formed by etching the upper side of the hole. An insulation layer(208) is formed on the walls of the hole and the tapered hole. A metal seed layer(209) is formed on the insulation layer.