公开(公告)号：KR20120065621A

公开(公告)日：2012-06-21

申请号：KR20100126842

申请日：2010-12-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SUNG KI JUN ,  NAM EUN SOO ,  KWON YONG HWAN ,  MHEEN BONG KI ,  OH MYOUNG SOOK ,  SIM JAE SIK ,  KIM KI SOO

IPC: H01L31/107

CPC classification number: H01L31/107 ,  H01L31/0392 ,  H01L31/047 ,  H01L31/18

Abstract: PURPOSE: An avalanche photodiode and a manufacturing method thereof are provided to efficiently reduce a size of the avalanche photodiode by minimizing an area for forming an N type electrode on the rear of an epitaxial wafer. CONSTITUTION: An epitaxial wafer including an absorbing layer(201), a grading layer(202), and an amplifying layer(204) is formed on a substrate(200). An insulation layer(205) is formed on the epitaxial wafer. One or more holes are formed from the insulation layer to the preset depth of the substrate. A tapered hole is formed by etching the upper side of the hole. An insulation layer(208) is formed on the walls of the hole and the tapered hole. A metal seed layer(209) is formed on the insulation layer.

Abstract translation: 目的：提供雪崩光电二极管及其制造方法，以通过最小化在外延晶片的后部形成N型电极的面积来有效地降低雪崩光电二极管的尺寸。 构成：在基板（200）上形成包括吸收层（201），分级层（202）和放大层（204）的外延晶片。 在外延晶片上形成绝缘层（205）。 从绝缘层到基板的预设深度形成一个或多个孔。 通过蚀刻孔的上侧形成锥形孔。 在孔的壁和锥形孔上形成绝缘层（208）。 在绝缘层上形成金属种子层（209）。