Patent search ap:("KOREA ELECTRONICS TELECOMM") AND inv:"PARK JONGHYURK" Page 1

1.

发明公开
GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME 有权
Title translation: WITH其制造氧化锌纳米结构和方法气体传感器

公开(公告)号：EP2044424A4

公开(公告)日：2011-12-14

申请号：EP07745782

申请日：2007-04-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN , KIM SANG-HYEOB , PARK JONGHYURK , MAENG SUNGLYUL

IPC: G01N27/12

CPC classification number: G01N27/12 , Y10T29/49002

2.

发明公开
METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER 审中-公开
Title translation: 用于生产硅纳米管的使用，一种环形催化金属层

公开(公告)号：EP2027059A4

公开(公告)日：2012-09-12

申请号：EP06824014

申请日：2006-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN , KIM SANG-HYEOB , MAENG SUNGLYUL , PARK JONGHYURK

IPC: H01L21/02 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/20 , H01L29/06 , H01L29/16

CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16

3.

发明公开
METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM 审中-公开
Title translation: 用于生产硅纳米线利用硅纳米点薄膜

公开(公告)号：EP2036117A4

公开(公告)日：2012-09-19

申请号：EP06824015

申请日：2006-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN , KIM SANG-HYEOB , PARK JONGHYURK , MAENG SUNGLYUL

IPC: H01L21/20 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/02

CPC classification number: C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932

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