公开(公告)号：WO2009031802A3

公开(公告)日：2009-04-23

申请号：PCT/KR2008005165

申请日：2008-09-03

Applicant: KOREA ELECTRONICS TELECOMM ,  KUMOH NAT INST TECHNOLOGY ,  KIM SANG-HYEOB ,  PARK SEUNG-SIK ,  KIM SANG-WOO ,  LEE GONG-GU ,  KIM SUNG-JIN ,  MAENG SUNGLYUL ,  LEE SUNYOUNG ,  MYOUNG HEY-JIN

Inventor： KIM SANG-HYEOB ,  PARK SEUNG-SIK ,  KIM SANG-WOO ,  LEE GONG-GU ,  KIM SUNG-JIN ,  MAENG SUNGLYUL ,  LEE SUNYOUNG ,  MYOUNG HEY-JIN

IPC: B82B3/00

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2329/0455 ,  Y10T428/24355

Abstract: Provided is a nano structure composite and a method of manufacturing the same. More specifically, a nano structure composite that includes a substrate, a first layer formed of carbon nano structures on the substrate, and a second layer formed of metal oxide nano structures on the first layer, and a method of manufacturing the same are provided. When the nano structure composite according to the present invention is used, a device having a field emission characteristic higher efficiency than a conventional device can be realized, and also, the device can be manufactured at a lower temperature and at a lower pressure. Thus, manufacturing cost can be reduced and a large scale process can be performed.

Abstract translation: 提供了一种纳米结构复合材料及其制造方法。 更具体地说，提供一种纳米结构复合体及其制造方法，其包括基板，由基板上的碳纳米结构形成的第一层和由第一层上的金属氧化物纳米结构形成的第二层。 当使用根据本发明的纳米结构复合材料时，可以实现具有比常规器件更高效率的场发射特性的器件，并且还可以在较低温度和较低压力下制造器件。 因此，可以降低制造成本并且可以执行大规模处理。

公开(公告)号：DE602004031827D1

公开(公告)日：2011-04-28

申请号：DE602004031827

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L29/00

公开(公告)号：AT502404T

公开(公告)日：2011-04-15

申请号：AT04257769

申请日：2004-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN TAK ,  YOUN DOO HYEB ,  CHAE BYUNG GYU ,  KANG KWANG YONG ,  LIM YONG SIK ,  KIM GYUNGOCK ,  MAENG SUNGLYUL ,  KIM SEONG HYUN

IPC: H01L49/00

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-tenninal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer,

公开(公告)号：EP2044424A4

公开(公告)日：2011-12-14

申请号：EP07745782

申请日：2007-04-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN ,  KIM SANG-HYEOB ,  PARK JONGHYURK ,  MAENG SUNGLYUL

IPC: G01N27/12

CPC classification number: G01N27/12 ,  Y10T29/49002

公开(公告)号：EP2027059A4

公开(公告)日：2012-09-12

申请号：EP06824014

申请日：2006-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN ,  KIM SANG-HYEOB ,  MAENG SUNGLYUL ,  PARK JONGHYURK

IPC: H01L21/02 ,  C01B33/02 ,  C01B33/027 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/20 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  C01B33/02 ,  C01B33/027 ,  C30B25/00 ,  C30B29/06 ,  C30B29/602 ,  H01L21/02532 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16

公开(公告)号：EP2036117A4

公开(公告)日：2012-09-19

申请号：EP06824015

申请日：2006-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： PARK RAE-MAN ,  KIM SANG-HYEOB ,  PARK JONGHYURK ,  MAENG SUNGLYUL

IPC: H01L21/20 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02

CPC classification number: C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02645 ,  Y10S977/762 ,  Y10S977/778 ,  Y10S977/891 ,  Y10S977/932