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公开(公告)号：JPH06244451A
公开(公告)日：1994-09-02
申请号：JP31815793
申请日：1993-12-17
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： RIYUU SHIHAN , BOKU SANYUU , KIN KOUBAN
IPC: H01L31/0352 , H01L31/107
Abstract: PURPOSE: To prevent unevenness and a decrease in steepness of a hetero-junction boundary surface, to reduce dark current due to tunneling, and to make an internal gain large by using an InAlAs/InGaAs superlattice structure as an amplification layer. CONSTITUTION: On an n -InP epitaxial layer 11 formed as a buffer layer on a substrate 10, an n-type InAlAs layer 12 is formed, and an it, an n -InAlAs layer 13 is formed while being relatively high in impurity density. On this layer 13, aon amplification layer 14 is further formed which has an InGaAs/InAlAs superlattice structure. On the amplification layer 14, p-type InAlAs layers 15 and 16, an absorption layer 17 of InGaAs, a p-type InP layer 18 for reducing the quantity of a surface leakage current, and an InGaAs layer 19 for ohmic junction are successively formed in order. Consequently, an epitaxial layer having high quality and accurate thickness and density is grown.
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公开(公告)号：JPH06237046A
公开(公告)日：1994-08-23
申请号：JP31815993
申请日：1993-12-17
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BOKU SANYUU , RIYUU SHIHAN , BOKU KEIGEN , KIN KOUBAN , CHIYOU TOUKUN , RI SHIGEKI
Abstract: PURPOSE: To improve the performance characteristic of a semiconductor laser by bringing p-electrode metal stripes into contact with an ohmic contact layer in wide areas, making the ohmic contact resistance smaller, narrowing the width of a ridge, reducing heat generation and reducing an oscillation critical current. CONSTITUTION: A ridge is formed in a semiconductor epitaxial layer composed by forming an active layer 32, an optical waveguide layer 33, a clad layer 34, and an ohmic contact layer 35 successively on an n-InP substrate 31, and p-electrode metal stripes 38 having the same width with the width r of the upper layer of this ridge, a dielectric substance 38 having ohmic contact stripes of a width w (w
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