公开(公告)号：JPH10173287A

公开(公告)日：1998-06-26

申请号：JP33012797

申请日：1997-12-01

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUN

Inventor： RI JUKI ,  BOKU KEIGEN ,  CHO GOSEI ,  CHO TOFUN ,  BOKU CHORUJUN

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/042 ,  H01S5/20 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To offset the unbalanced distribution of light in the longitudinal direction of a resonator by modulating the gain of an active area in the longitudinal direction in the same period as that of ion implantation by means of an ion- implanted area. SOLUTION: After ions are implanted into an area by using an insulating film and a photoresist as a mask and the photoresist and insulating film are removed, the front and rear surfaces of an element are coated with Si3 N4 insulating films and the insulting films are heat-treated at a high temperature so as to insulate the ion-implanted area. Then secondary crystal growth is performed in the order of a GaInP clad layer 17, a GaInAsP buffer layer 18, and GaAs 19 for forming ohmic contact. Then, after the insulating films are removed, the entire surfaces of etched ridges are coated with Si3 N4 , etc., and, after forming current injecting ports at the upper ends of the ridges, p-side electrodes 22 are formed by vapor deposition. Therefore, the gain of an active layer in the longitudinal direction can be modulated in the same period as that of the ion implantation by means of the ion-implanted area.

公开(公告)号：JPH0864907A

公开(公告)日：1996-03-08

申请号：JP19998995

申请日：1995-08-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIGEKI ,  CHIYOU TOUKUN ,  KIN TEISHIYU ,  BOKU KEIGEN

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/30 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To reduce leakage currents from the joint surface between a semiconductor substrate and the first current blocking layer and that due to thyristor structure. SOLUTION: Through a mask 29, a second clad layer 27, an active layer 25, a first clad layer 23, and a semiconductor substrate 21 are etched with a non-selective etching liquid so as to form a truncated cone. Then the layers 27, 23, and 21, except for the active layer 25 are selectively etched so as to accurately expose a crystal plane, in order that a first current blocking layer and a second current blocking layer are formed to cover the entire structure from the upper side surface of the second clad layer 27 to the upper surface of the semiconductor substrate 21.

公开(公告)号：JPH06237046A

公开(公告)日：1994-08-23

申请号：JP31815993

申请日：1993-12-17

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU SANYUU ,  RIYUU SHIHAN ,  BOKU KEIGEN ,  KIN KOUBAN ,  CHIYOU TOUKUN ,  RI SHIGEKI

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18

Abstract: PURPOSE: To improve the performance characteristic of a semiconductor laser by bringing p-electrode metal stripes into contact with an ohmic contact layer in wide areas, making the ohmic contact resistance smaller, narrowing the width of a ridge, reducing heat generation and reducing an oscillation critical current. CONSTITUTION: A ridge is formed in a semiconductor epitaxial layer composed by forming an active layer 32, an optical waveguide layer 33, a clad layer 34, and an ohmic contact layer 35 successively on an n-InP substrate 31, and p-electrode metal stripes 38 having the same width with the width r of the upper layer of this ridge, a dielectric substance 38 having ohmic contact stripes of a width w (w