公开(公告)号：JPH08162625A

公开(公告)日：1996-06-21

申请号：JP31732594

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GO MITSUTATSU ,  YASU CHIYUUKEN ,  KIN TEISHIYU

IPC: G02B6/12 ,  G02B6/136 ,  H01L25/16 ,  H01L27/15 ,  H01L31/18 ,  H01L33/12 ,  H01L33/30 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/10 ,  H01L33/00

Abstract: PURPOSE: To obtain an optical integrated circuit manufacturing method capable of maximizing current conversion and the efficiency of optical connection simultaneously by a simple process, on the occasion of integrating an optical waveguide and an active photoelement such as an optical amplifier etc., especially, concerning to a manufacturing method for optical integrated circuits, each having a large number of optical elements and optical waveguides integrated on a single chip. CONSTITUTION: Layers 2, 3, 4 to be used for forming active elements (an optical amplifier for example) are provided beforehand on an InP wafer 1. The surfaces vertical to the surface (001) of the said layers 2, 3, 4 are etched. Etching is performed using a dry etching technique such as RIE etching and so on. After the said etching, the core layer 6 and the clad layer 7 of the waveguide are formed by MOCVD (second crystal growth process).