公开(公告)号：WO2010032978A2

公开(公告)日：2010-03-25

申请号：PCT/KR2009005313

申请日：2009-09-18

Applicant: KOREA ELECTRONICS TELECOMM ,  YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

Inventor： YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/0227 ,  C23C16/24

Abstract: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.

Abstract translation: 本发明提供一种通过化学气相沉积（CVD）沉积非晶硅薄膜的方法，以防止在暴露于空气的基板上沉积非晶硅薄膜时发生气泡缺陷。 沉积方法包括用被等离子体激活的反应气体清洁被污染基板的表面，并在清洁过的基板上沉积非晶硅薄膜。 在此，从基板清洁步骤到薄膜沉积步骤保持真空状态，以防止通过再次暴露于空气而污染清洁过的基板的表面。

公开(公告)号：KR20100033091A

公开(公告)日：2010-03-29

申请号：KR20080092080

申请日：2008-09-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

IPC: H01L21/205

CPC classification number: C23C16/0227 ,  C23C16/24

Abstract: PURPOSE: A method for depositing of an amorphous silicon thin film is provided to prevent the deformity of the bubble type due to the evaporation of the amorphous silicon thin film to the polluted top of the substrate. The manufacture yield of device is improved. CONSTITUTION: A polluted substrate is provided by a reaction chamber(S20). Here, the polluted substrate comes due to exposure among the air. The surface of substrate is washed with a reaction gas(S22). Here, the reaction gas is activated with the plasma. The amorphous silicon thin film is evaporated in the washed substrate(S24). In the cleaning step of substrate, vacuum maintains for the deposition step of the thin film.

Abstract translation: 目的：提供一种用于沉积非晶硅薄膜的方法，以防止由于非晶硅薄膜蒸发到基底的污染顶部而导致的气泡型变形。 改善了器件的制造成品率。 构成：由反应室提供污染的基材（S20）。 在这里，受污染的基材是由于空气中的暴露。 用反应气体洗涤底物表面（S22）。 这里，反应气体被等离子体活化。 在洗涤过的衬底中蒸发非晶硅薄膜（S24）。 在基板的清洗步骤中，真空维持薄膜的沉积步骤。