公开(公告)号：WO2010032978A2

公开(公告)日：2010-03-25

申请号：PCT/KR2009005313

申请日：2009-09-18

Applicant: KOREA ELECTRONICS TELECOMM ,  YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

Inventor： YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/0227 ,  C23C16/24

Abstract: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.

Abstract translation: 本发明提供一种通过化学气相沉积（CVD）沉积非晶硅薄膜的方法，以防止在暴露于空气的基板上沉积非晶硅薄膜时发生气泡缺陷。 沉积方法包括用被等离子体激活的反应气体清洁被污染基板的表面，并在清洁过的基板上沉积非晶硅薄膜。 在此，从基板清洁步骤到薄膜沉积步骤保持真空状态，以防止通过再次暴露于空气而污染清洁过的基板的表面。

公开(公告)号：KR100983818B1

公开(公告)日：2010-09-27

申请号：KR20100026290

申请日：2010-03-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YANG WOO SEOK ,  CHEON SANG HOON ,  CHO SEONG MOK ,  RYU HO JUN ,  CHOI CHANG AUCK

IPC: H01L31/09 ,  G01J5/02 ,  H01L27/14

CPC classification number: G01J5/04 ,  G01J5/046

Abstract: PURPOSE: A resistive materials for a bolometer, the bolometer for an infrared detector using the materials, and a method for preparing the same are provided to have high TCR, low resistivity and low noise constant by adding at least one element selected from nitrogen, oxygen, and germanium into antimony. CONSTITUTION: A detection circuit is formed inside a semiconductor substrate(110). A reflective film(112) is formed in the partial domain of the surface of the semiconductor substrate. A metal pad(114) is spaced from both sides of a reflective film by a certain interval. A sensor structure(130) is located on the top of the semiconductor substrate. The sensor structure comprises a register(142).

Abstract translation: 目的：提供用于测辐射热表的电阻材料，使用该材料的红外探测器的测辐射热计及其制备方法，通过加入至少一种选自氮气，氧气的元素，具有高TCR，低电阻率和低噪声常数 ，锗变成锑。 构成：在半导体衬底（110）内形成检测电路。 在半导体衬底的表面的部分区域中形成反射膜（112）。 金属垫（114）与反射膜的两侧间隔一定间隔。 传感器结构（130）位于半导体衬底的顶部。 传感器结构包括寄存器（142）。

公开(公告)号：KR20100005908A

公开(公告)日：2010-01-18

申请号：KR20080066015

申请日：2008-07-08

Applicant: KOREA ELECTRONICS TELECOMM ,  KWANGJU INST SCI & TECH

Inventor： LEE MYUNG LAE ,  LEE JONG HYUN ,  YUN SUNG SIK ,  JEONG DAE HUN ,  HWANG GUNN ,  CHOI CHANG AUCK ,  JE CHANG HAN ,  AN JAE YONG

IPC: H01L29/00

CPC classification number: B81C1/00619 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: PURPOSE: A manufacturing method of a micro vertical structure is provided to improve the performance of an MEMS device such as an electrostatic sensor and an optical element by minimizing form defects and footing phenomenon. CONSTITUTION: An insulating layer pattern(220a) and a hollow space are formed in order to prevent footing phenomenon by patterning an insulating layer(220) after forming the insulating layer on a first crystalline silicon substrate. After welding a second crystalline silicon substrate(230) on the dielectric layer pattern, the second crystalline silicon substrate is etched through a deep reactive ion etching method along the crystal plane of the vertical direction to the second crystalline silicon substrate. A micro vertical structure(230a) with a side vertically to the second crystalline silicon substrate is formed by etching the etched side surface of the second crystalline silicon substrate through a crystalline wet etching method.

Abstract translation: 目的：提供微垂直结构的制造方法，以通过最小化形状缺陷和基础现象来改善诸如静电传感器和光学元件的MEMS装置的性能。 构成：为了防止在第一晶体硅衬底上形成绝缘层之后对绝缘层（220）进行构图，防止基脚现象形成绝缘层图案（220a）和中空空间。 在电介质层图案上焊接第二晶体硅衬底（230）之后，通过深反应离子蚀刻方法沿着与第二晶体硅衬底的垂直方向的晶面蚀刻第二晶体硅衬底。 通过结晶湿蚀刻方法蚀刻第二晶体硅衬底的蚀刻侧表面，形成具有垂直于第二晶体硅衬底的一侧的微立体结构（230a）。

公开(公告)号：KR20100033091A

公开(公告)日：2010-03-29

申请号：KR20080092080

申请日：2008-09-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YANG WOO SEOK ,  CHO SEONG MOK ,  RYU HO JUN ,  CHEON SANG HOON ,  YU BYOUNG GON ,  CHOI CHANG AUCK

IPC: H01L21/205

CPC classification number: C23C16/0227 ,  C23C16/24

Abstract: PURPOSE: A method for depositing of an amorphous silicon thin film is provided to prevent the deformity of the bubble type due to the evaporation of the amorphous silicon thin film to the polluted top of the substrate. The manufacture yield of device is improved. CONSTITUTION: A polluted substrate is provided by a reaction chamber(S20). Here, the polluted substrate comes due to exposure among the air. The surface of substrate is washed with a reaction gas(S22). Here, the reaction gas is activated with the plasma. The amorphous silicon thin film is evaporated in the washed substrate(S24). In the cleaning step of substrate, vacuum maintains for the deposition step of the thin film.

Abstract translation: 目的：提供一种用于沉积非晶硅薄膜的方法，以防止由于非晶硅薄膜蒸发到基底的污染顶部而导致的气泡型变形。 改善了器件的制造成品率。 构成：由反应室提供污染的基材（S20）。 在这里，受污染的基材是由于空气中的暴露。 用反应气体洗涤底物表面（S22）。 这里，反应气体被等离子体活化。 在洗涤过的衬底中蒸发非晶硅薄膜（S24）。 在基板的清洗步骤中，真空维持薄膜的沉积步骤。