公开(公告)号：DE4445566A1

公开(公告)日：1996-06-05

申请号：DE4445566

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： OH KWANG-RYONG ,  AHN JU-HEON ,  KIM JEONG-SOO

IPC: G02B6/12 ,  G02B6/136 ,  H01L25/16 ,  H01L27/15 ,  H01L31/18 ,  H01L33/12 ,  H01L33/30 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/10 ,  G02B6/132 ,  H01S3/19 ,  H01L27/144

Abstract: Prepn. of an integrated optical semiconductor circuit, with an optical device such as an optical intensifier and a waveguide, involves (a) growing optical device-forming layers on an InP substrate; (b) etching away the layers along a plane perpendicular to a (001) plane by wet etching or dry etching (RIE); and (c) growing the core layer and cladding layer of the waveguide by MOCVD. Also claimed are processes for (i) prodn. of an integrated optical semiconductor circuit with an optical device having a hetero-junction structure, formed by an InP cladding layer / an InGaAs active layer / an InP cladding layer and a waveguide; (ii) prodn. of an integrated optical semiconductor circuit with an active optical device and a waveguide; and (iii) prodn. of a buried semiconductor laser diode.