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Patent Agency Ranking
公开(公告)号：DE4445566A1
公开(公告)日：1996-06-05
申请号：DE4445566
申请日：1994-12-20
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： OH KWANG-RYONG , AHN JU-HEON , KIM JEONG-SOO
IPC: G02B6/12 , G02B6/136 , H01L25/16 , H01L27/15 , H01L31/18 , H01L33/12 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/10 , G02B6/132 , H01S3/19 , H01L27/144
Abstract: Prepn. of an integrated optical semiconductor circuit, with an optical device such as an optical intensifier and a waveguide, involves (a) growing optical device-forming layers on an InP substrate; (b) etching away the layers along a plane perpendicular to a (001) plane by wet etching or dry etching (RIE); and (c) growing the core layer and cladding layer of the waveguide by MOCVD. Also claimed are processes for (i) prodn. of an integrated optical semiconductor circuit with an optical device having a hetero-junction structure, formed by an InP cladding layer / an InGaAs active layer / an InP cladding layer and a waveguide; (ii) prodn. of an integrated optical semiconductor circuit with an active optical device and a waveguide; and (iii) prodn. of a buried semiconductor laser diode.
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公开(公告)号：GB2281786A
公开(公告)日：1995-03-15
申请号：GB9418153
申请日：1994-09-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HONG-MAN , OH KWANG-RYONG , PARK KI-SUNG , PARK CHONG-DAE
Abstract: An optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, is manufactured by the steps of: sequentially forming an optical waveguide layer 12, an n-InP clad layer 13 and an n-InGaAs cap layer 15 on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes 17, 18 on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.
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公开(公告)号：GB2281786B
公开(公告)日：1997-05-28
申请号：GB9418153
申请日：1994-09-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HONG-MAN , OH KWANG-RYONG , PARK KI-SUNG , PARK CHONG-DAE
Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.
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公开(公告)号：DE4432010C2
公开(公告)日：1996-08-14
申请号：DE4432010
申请日：1994-09-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HONG-MAN , OH KWANG-RYONG , PARK KI-SUNG , PARK CHONG-DAE
Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.
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公开(公告)号：DE4432010A1
公开(公告)日：1995-03-16
申请号：DE4432010
申请日：1994-09-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HONG-MAN , OH KWANG-RYONG , PARK KI-SUNG , PARK CHONG-DAE
Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.
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