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公开(公告)号：GB2284942A
公开(公告)日：1995-06-21
申请号：GB9425244
申请日：1994-12-14
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： SUNG HEE KYUNG , LEE CHANG HWA , KIM TAE HONG , LEE SANG SEOK , CHOI TAE GOO
Abstract: A dielectric resonator comprises a dielectric block 301 with a first electrode 305 formed on a first surface 302 and a second electrode 304 formed within an inner conductive hole 303 extending from the surface opposite the first surface 302, towards but not reaching the first surface 302, such that the first and second electrodes 304, 305 face each other to form a coupling capacitor and a conductive layer formed on one or more of the remaining surfaces. The resonators may be combined to form a filter arrangement. The filter may include window and groove arrangements to adjust the coupling between the resonators. The inner conductive hole 303 may have a circular, elliptical or quadrilateral cross sectional shape. The first electrode 305 may extend to an edge of the dielectric block 301 to form a connection terminal allowing direct surface mounting on to a circuit board.
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公开(公告)号：GB2284942B
公开(公告)日：1997-06-18
申请号：GB9425244
申请日：1994-12-14
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： SUNG HEE KYUNG , LEE CHANG HWA , KIM TAE HONG , LEE SANG SEOK , CHOI TAE GOO
Abstract: A dielectric resonator includes a dielectric block having an open surface at one of the surfaces thereof, the remaining surfaces being plated with a conductor. The dielectric block has an inner conductor hole formed at a surface of the dielectric block opposite to the open surface, the inner conductor hole extending a predetermined depth toward the open surface such that it does not perforate through the open surface. An electrode pattern is formed on the open surface such that it faces an end surface of the inner conductor hole, the electrode pattern being adapted to provide an input/output capacitor. The dielectric block has a coupling window formed on a predetermined portion of one of the surfaces of the dielectric block, except for the open surface and the surface formed with the inner conductor hole, at a position adjacent to one of the open surface and the surface formed with the inner conductor hole. The coupling window is free of the plated conductor and adapted to control a coupling degree of the resonator to another resonator. Other embodiments include integral type filters having resonators in a single dielectric block.
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公开(公告)号：FR2728355B1
公开(公告)日：1998-02-13
申请号：FR9514165
申请日：1995-11-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SIM JAE GI , SIN JUNG UK , CHUNG MYOUNG YOUNG , CHOI TAE GOO
Abstract: The present invention relates to a method for fabricating the plane waveguide path type of the heater buried optical switch, and it exposes the thin film heater removing the second clad layer to speed the heat radiation of the thin film heater by forming flatly the first clad layer having the thin thickness of about 5-10 mu m on the channel waveguide path on which the channel waveguide path is formed on the lower clad layer, and forming the second upper clad layer in the thickness of about 15-20 mu m on the first clad layer and the thin film heater after the thin heater having the line width of about two times as compared with these of the channel waveguide path is formed at the channel waveguide path and the corresponding portion on the first upper clad layer. Therefore, the crosstalk between the neighboring channel waveguides can be protected since the heat generated in the thin film heater inhibits to transmit the neighboring channel waveguide paths, and the switch velocity accelerates as speeding the heat transmitting velocity, and it can operate at the low operational power.
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公开(公告)号：FR2728355A1
公开(公告)日：1996-06-21
申请号：FR9514165
申请日：1995-11-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SIM JAE GI , SIN JUNG UK , CHUNG MYOUNG YOUNG , CHOI TAE GOO
Abstract: The lower layer (13) is a phosphosilicate glass of thickness between 18 and 22 micrometres and the waveguides (15) is a germanophosphate glass of thickness between 6 and 8 micrometres. The concentration in these layers is then increased by heat treatment. A mask is formed on the waveguide and it is chemically attacked by a tetrafluoromethane and trifluoromethane mixture. The upper layer is a 10 to 18 micrometre layer of borophosphosilicate glass, including the waveguides and the heating element (21) has a thickness between 0.1 and 0.2 micrometres with a width of 12 to 16 micrometres in titanium and tantalum. These are overlaid by a second upper layer (23) of borophosphosilicate of 15 to 20 micrometres thickness.
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