公开(公告)号：WO2006057541A1

公开(公告)日：2006-06-01

申请号：PCT/KR2005/004039

申请日：2005-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  LEE, Taek Sung ,  KIM, In Ho ,  LEE, Kyeong Seok ,  KIM, Won Mok ,  AHN, Dong-Ho ,  KIM, Ki-Bum

IPC: H01L27/115

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Abstract translation: 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

公开(公告)号：WO2007001112A1

公开(公告)日：2007-01-04

申请号：PCT/KR2006/001387

申请日：2006-04-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  JUNG, Han Ju ,  LEE, Taek Sung ,  KIM, In Ho ,  KIM, Won Mok ,  LEE, Kyeong Seok

IPC: H01L27/10

CPC classification number: H01L45/1233 ,  C01B19/002 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  Y10T428/21

Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600°C or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

Abstract translation: 本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于 对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级的范围内，从而具有600℃或更低的熔融温度。 可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

公开(公告)号：WO2009084748A1

公开(公告)日：2009-07-09

申请号：PCT/KR2007/006958

申请日：2007-12-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  LEE, Suyoun ,  CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  LEE, Taek Sung ,  KIM, Won Mok

Inventor： LEE, Suyoun ,  CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  LEE, Taek Sung ,  KIM, Won Mok

IPC: G11C13/02

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

Abstract translation: 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。